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DIP EPROM 4

EPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
CY27C256-150WI by Cypress Semiconductor

CY27C256-150WI

Cypress Semiconductor

CY27C256-150WI by Cypress Semiconductor is a 32KX8 EPROM with 262144-bit memory density. It operates at 5V, has a max access time of 150ns, and supports asynchronous mode. Ideal for industrial applications requiring reliable non-volatile memory storage in a ceramic, glass-sealed package.

150 ns

R-GDIP-T28

262144 bit

UVPROM

8

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

CERAMIC, GLASS-SEALED

DIP

RECTANGULAR

IN-LINE

PARALLEL

Not Qualified

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

DUAL

M27C160-100F1 by STMicroelectronics

M27C160-100F1

STMicroelectronics

M27C160-100F1 by STMicroelectronics is a 1MX16 EPROM with 100ns access time, operating at 5V. It features a CMOS technology, 3-STATE output characteristics, and through-hole terminal form. Ideal for applications requiring fast memory access in commercial temperature environments.

100 ns

USER CONFIGURABLE AS 1M X 16

8

COMMON

R-CDIP-T42

e3

54.635 mm

16777216 bit

UVPROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.71 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C160-50F1 by STMicroelectronics

M27C160-50F1

STMicroelectronics

M27C160-50F1 by STMicroelectronics is a 16-bit EPROM with a 5V supply, featuring asynchronous operation and a max access time of 50 ns. It supports up to 1M words in a ceramic package, ideal for commercial applications. Its dual terminal form ensures reliable performance in various electronic devices.

50 ns

8

COMMON

R-CDIP-T42

e3

54.635 mm

16777216 bit

UVPROM

16

1

42

1048576 words

1M

ASYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

DIP

DIP42,.6

RECTANGULAR

IN-LINE

PARALLEL

5

Not Qualified

5.71 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

MD27C64-35 by Rochester Electronics

MD27C64-35

Rochester Electronics

MD27C64-35 by Rochester Electronics is a MIL-PRF-38535 EPROM with 8KX8 organization, 8192 words, and 65536 bit memory density. It operates in asynchronous mode with a max access time of 350 ns. Ideal for military applications requiring reliable non-volatile memory solutions.

350 ns

COMMON

R-XDIP-T28

65536 bit

UVPROM

8

1

28

8192 words

8K

ASYNCHRONOUS

70 Cel

0 Cel

8KX8

3-STATE

UNSPECIFIED

DIP

DIP28,.6

RECTANGULAR

IN-LINE

PARALLEL

NOT SPECIFIED

12.5

MIL-PRF-38535

.00014 Amp

30 mA

5.5 V

4.5 V

5

NO

CMOS

MILITARY

THROUGH-HOLE

DUAL

NOT SPECIFIED