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40 EPROM 6

EPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Screening Level Maximum Seated Height Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
M27C4002-10F1 by STMicroelectronics

M27C4002-10F1

STMicroelectronics

M27C4002-10F1 EPROM by STMicroelectronics features 256KX16 organization, 100ns access time, and 70mA max supply current. Ideal for commercial applications requiring reliable non-volatile memory with a parallel interface.

100 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-10F6 by STMicroelectronics

M27C4002-10F6

STMicroelectronics

The STMicroelectronics M27C4002-10F6 EPROM features 256KX16 organization, 100 ns access time, and 3-STATE output characteristics. Ideal for industrial applications requiring a memory density of 4194304 bit with a parallel interface. Operating at temperatures from -40 to 85 °C, it offers reliable performance in various electronic systems.

100 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-12F1 by STMicroelectronics

M27C4002-12F1

STMicroelectronics

The STMicroelectronics M27C4002-12F1 is a 256KX16 EPROM with 120ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and through-hole terminal form. Ideal for commercial applications requiring reliable memory storage with a memory density of 4194304 bits.

120 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

245

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-15F1 by STMicroelectronics

M27C4002-15F1

STMicroelectronics

STMicroelectronics M27C4002-15F1 is a 256KX16 EPROM with 150 ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and common I/O type. Ideal for commercial applications requiring reliable non-volatile memory storage in a rectangular package style.

150 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.5 V

4.5 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-45XF1 by STMicroelectronics

M27C4002-45XF1

STMicroelectronics

M27C4002-45XF1 EPROM by STMicroelectronics features 256KX16 organization, 45 ns access time, and 5V nominal voltage. Ideal for applications requiring fast and reliable non-volatile memory storage in commercial temperature environments.

45 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm

M27C4002-80XF1 by STMicroelectronics

M27C4002-80XF1

STMicroelectronics

M27C4002-80XF1 EPROM by STMicroelectronics features 256KX16 organization, 80 ns access time, and 5V nominal voltage. Ideal for commercial applications requiring reliable non-volatile memory with a memory density of 4Mbit and parallel interface.

80 ns

COMMON

R-CDIP-T40

e3

52.195 mm

4194304 bit

UVPROM

16

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

CERAMIC, METAL-SEALED COFIRED

WDIP

DIP40,.6

RECTANGULAR

IN-LINE, WINDOW

PARALLEL

5

Not Qualified

5.72 mm

.0001 Amp

EPROMs

70 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

15.24 mm