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TFBGA EEPROM 6

EEPROM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
XCF08PFS48C by Xilinx

XCF08PFS48C

Xilinx

Xilinx XCF08PFS48C is a 1.8V EEPROM with 8388608-bit memory density, suitable for industrial applications. It operates synchronously at up to 33MHz clock frequency and offers 20000 write/erase cycles. With a compact rectangular package style and thin profile, it's ideal for space-constrained designs requiring reliable configuration memory.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF16PFS48C by Xilinx

XCF16PFS48C

Xilinx

Xilinx XCF16PFS48C is a 1.8V EEPROM with 16MX1 organization and 16777216 bit memory density. It operates in synchronous mode and has a max supply current of 40mA. This configuration memory is commonly used in industrial applications for storing data with endurance of 20000 write/erase cycles.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF32PFS48C by Xilinx

XCF32PFS48C

Xilinx

Xilinx XCF32PFS48C is a 32MX1 EEPROM with 33554432-bit memory density. It operates at 1.8V, has 48 terminals, and supports industrial temperature grade. Ideal for configuration memory applications, it offers 20000 write/erase cycles and serial interface with NOR type technology.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e0

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

240

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF08PFSG48C by Xilinx

XCF08PFSG48C

Xilinx

Xilinx XCF08PFSG48C is a 1.8V EEPROM with 8MX1 organization, NOR type, and 8388608-bit memory density. It operates at -40 to 85°C for industrial applications, featuring a max clock frequency of 33 MHz in a thin profile grid array package.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

33 MHz

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

8388608 bit

CONFIGURATION MEMORY

1

3

1

48

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

.001 Amp

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF16PFSG48C by Xilinx

XCF16PFSG48C

Xilinx

Xilinx XCF16PFSG48C is a 1.8V EEPROM with 16MX1 organization, NOR type, and 16777216-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and has a thin profile grid array package suitable for configuration memory applications. With 20000 write/erase cycles endurance, it offers reliable performance in various industrial settings.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

16777216 bit

CONFIGURATION MEMORY

1

3

1

48

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX1

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

XCF32PFSG48C by Xilinx

XCF32PFSG48C

Xilinx

Xilinx XCF32PFSG48C is a 32MX1 EEPROM with 3-STATE output, operating at 50 MHz clock frequency. It has 33554432-bit memory density and supports NOR type technology. Ideal for industrial applications, it offers 20000 Write/Erase cycles endurance and operates in a temperature range of -40 to 85°C.

IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL

50 MHz

20

20000 Write/Erase Cycles

R-PBGA-B48

e2

9 mm

33554432 bit

CONFIGURATION MEMORY

1

3

1

48

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX1

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

SERIAL

260

1.5/3.3,1.8

1.8

Not Qualified

1.2 mm

Flash Memories

40 mA

2 V

1.65 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)

BALL

.8 mm

BOTTOM

30

NOR TYPE

8 mm

HARDWARE