Loading...

LFBGA DRAM 14

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
IS43TR16512A-15HBLI by Integrated Silicon Solution

IS43TR16512A-15HBLI

Integrated Silicon Solution

IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3 DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

512MX16

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.4 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48H16M32L2B5-10IT by Micron Technology

MT48H16M32L2B5-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-10 by Micron Technology

MT48H16M32L2B5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-8IT by Micron Technology

MT48H16M32L2B5-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Memory Density: 536870912 bit;

FOUR BANK PAGE BURST

8.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2B5-8 by Micron Technology

MT48H16M32L2B5-8

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-10IT by Micron Technology

MT48H16M32L2F5-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Qualification: Not Qualified;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-10 by Micron Technology

MT48H16M32L2F5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-8IT by Micron Technology

MT48H16M32L2F5-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

FOUR BANK PAGE BURST

8.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48H16M32L2F5-8 by Micron Technology

MT48H16M32L2F5-8

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: LFBGA; Package Shape: RECTANGULAR; Memory Width: 32;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.4 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT41J512M8THU-15E:A by Micron Technology

MT41J512M8THU-15E:A

Micron Technology

Micron Technology's MT41J512M8THU-15E:A is a DDR3 DRAM with 512MX8 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B82

e1

15 mm

4294967296 bit

DDR3 DRAM

8

1

1

82

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.35 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

12.5 mm

MT47H32M8BP-37V:B by Micron Technology

MT47H32M8BP-37V:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: LFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B60

e1

12 mm

268435456 bit

DDR2 DRAM

8

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

LFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.3 mm

YES

4,8

.005 Amp

DRAMs

280 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H16M16BG-37V:B by Micron Technology

MT47H16M16BG-37V:B

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: LFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.5 ns

AUTO/SELF REFRESH

266 MHz

COMMON

4,8

R-PBGA-B84

e1

14 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.3 mm

YES

4,8

.006 Amp

DRAMs

280 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J512M8THU-187E:A by Micron Technology

MT41J512M8THU-187E:A

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 82; Package Code: LFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

533 MHz

COMMON

R-PBGA-B82

e1

15 mm

4294967296 bit

DDR3 DRAM

8

1

1

82

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

LFBGA

BGA82,11X13,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.35 mm

YES

.035 Amp

DRAMs

445 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

12.5 mm

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution

IS43TR16512S2DL-125KBLI

Integrated Silicon Solution

IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

3-STATE

PLASTIC/EPOXY

LFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

260

8192

1.4 mm

YES

4,8

.044 Amp

1.283 V

246 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm