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BGA DRAM 28

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46H16M16LFBF-6AT:H by Micron Technology

MT46H16M16LFBF-6AT:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

BGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

8192

YES

2,4,8,16

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

MT46H8M16LFBF-6AT:K by Micron Technology

MT46H8M16LFBF-6AT:K

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: BGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

134217728 bit

LPDDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

105 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

BGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY

1.8

Not Qualified

4096

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

UPD48288209AFF-E24-DW1-A by Renesas Electronics

UPD48288209AFF-E24-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 400 MHz; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH; IT ALSO REQUIRES AT 2.5V

400 MHz

COMMON

2,4,8

R-PBGA-B144

e6

18.5 mm

301989888 bit

DDR1 DRAM

9

1

1

144

33554432 words

32M

SYNCHRONOUS

32MX9

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

1.17 mm

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

11 mm

UPD48288236AFF-E18-DW1-A by Renesas Electronics

UPD48288236AFF-E18-DW1-A

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 533 MHz; Memory Width: 36;

533 MHz

COMMON

R-PBGA-B144

e6

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

TIN BISMUTH

BALL

.8 mm

BOTTOM

UPD48288236AFF-E33-DW1 by Renesas Electronics

UPD48288236AFF-E33-DW1

Renesas Electronics

DDR1 DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Width: 36; JESD-30 Code: R-PBGA-B144;

300 MHz

COMMON

R-PBGA-B144

301989888 bit

DDR1 DRAM

36

144

8388608 words

8M

8MX36

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.8,2.5

Not Qualified

2,4,8

DRAMs

YES

CMOS

BALL

.8 mm

BOTTOM

MT49H16M18BM-33 by Micron Technology

MT49H16M18BM-33

Micron Technology

DDR DRAM; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Additional Features: AUTO REFRESH; No. of Words Code: 16M;

MULTI BANK PAGE BURST

.3 ns

AUTO REFRESH

300 MHz

COMMON

R-PBGA-B144

e1

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

16MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

260

1.5/1.8,1.8,2.5

Not Qualified

.93 mm

2,4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

11 mm

MT49H16M18CFM-5IT by Micron Technology

MT49H16M18CFM-5IT

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 301989888 bit;

MULTI BANK PAGE BURST

.5 ns

AUTO REFRESH

200 MHz

SEPARATE

2,4,8

R-PBGA-B144

e0

18.5 mm

301989888 bit

DDR DRAM

18

1

1

144

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX18

3-STATE

PLASTIC/EPOXY

BGA

BGA144,12X18,40/32

RECTANGULAR

GRID ARRAY

1.5/1.8,1.8,2.5

Not Qualified

.93 mm

.026 Amp

DRAMs

597 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

11 mm

MT40A4G4DVN-062H:E by Micron Technology

MT40A4G4DVN-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

BOTTOM

MT40A8G4CLU-062H:E by Micron Technology

MT40A8G4CLU-062H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Memory Density: 34359738368 bit;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A8G4CLU-075H:E by Micron Technology

MT40A8G4CLU-075H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT47H64M16HR-25EXIT:H by Micron Technology

MT47H64M16HR-25EXIT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: BGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

BGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY

260

1.8

Not Qualified

8192

YES

4,8

.007 Amp

DRAMs

260 mA

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

30

MT46V16M16CY-5BXIT:M by Micron Technology

MT46V16M16CY-5BXIT:M

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.5 V;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B60

e1

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

EDF8132A3MA-JD-F-D by Micron Technology

EDF8132A3MA-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 178; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B178

e1

11.5 mm

8589934592 bit

LPDDR3 DRAM

32

1

1

178

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

.85 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10.5 mm

MT41K256M16HA-125XIT:E by Micron Technology

MT41K256M16HA-125XIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125XIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in grid array package style.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.45 V

1.283 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT47H64M16HR-25EXIT:HTR by Micron Technology

MT47H64M16HR-25EXIT:HTR

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 64MX16;

MULTI BANK PAGE BURST

SELF REFRESH

R-PBGA-B84

e1

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

ASYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

BOTTOM

MT40A4G4DVN-075H:E by Micron Technology

MT40A4G4DVN-075H:E

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.14 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

BOTTOM

MT53D1024M32D4DT-053AAT:D by Micron Technology

MT53D1024M32D4DT-053AAT:D

Micron Technology

Micron's MT53D1024M32D4DT-053AAT:D is a 1GX32 DDR4 DRAM with 32-bit memory width and 34359738368 bit density. It operates synchronously in grid array package style, suitable for high-performance computing applications.

X-PBGA-B

34359738368 bit

DDR4 DRAM

32

1

1

1073741824 words

1G

SYNCHRONOUS

1GX32

PLASTIC/EPOXY

BGA

UNSPECIFIED

GRID ARRAY

NOT SPECIFIED

YES

CMOS

BALL

BOTTOM

NOT SPECIFIED

MT40A4G4DVN-062H:ETR by Micron Technology

MT40A4G4DVN-062H:ETR

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

17179869184 bit

DDR4 DRAM

4

1

1

78

4294967296 words

4G

SYNCHRONOUS

95 Cel

0 Cel

4GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A8G4CLU-062H:ETR by Micron Technology

MT40A8G4CLU-062H:ETR

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): 30;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

MT40A8G4CLU-075H:ETR by Micron Technology

MT40A8G4CLU-075H:ETR

Micron Technology

DDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

e1

34359738368 bit

DDR4 DRAM

4

1

1

78

8589934592 words

8G

SYNCHRONOUS

95 Cel

0 Cel

8GX4

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

260

YES

1.26 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

BOTTOM

30

S27KL0642GABHM020 by Infineon Technologies

S27KL0642GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; Memory Width: 1;

35 ns

200 MHz

R-PBGA-B24

67108864 bit

HYPERRAM

1

3

1

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

S27KS0642GABHM023 by Infineon Technologies

S27KS0642GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 64MX1; Screening Level: AEC-Q100;

35 ns

200 MHz

R-PBGA-B24

67108864 bit

HYPERRAM

1

3

1

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

S70KL1282GABHM020 by Infineon Technologies

S70KL1282GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words Code: 128M; Terminal Position: BOTTOM;

35 ns

200 MHz

COMMON

R-PBGA-B240

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

S27KS0642GABHM020 by Infineon Technologies

S27KS0642GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Package Body Material: PLASTIC/EPOXY;

35 ns

200 MHz

R-PBGA-B24

67108864 bit

HYPERRAM

1

3

1

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

S70KS1282GABHM023 by Infineon Technologies

S70KS1282GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Technology: CMOS; Memory Width: 1;

35 ns

200 MHz

R-PBGA-B24

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM

S27KL0642GABHM023 by Infineon Technologies

S27KL0642GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3; Package Body Material: PLASTIC/EPOXY;

35 ns

200 MHz

R-PBGA-B24

67108864 bit

HYPERRAM

1

3

1

1

24

67108864 words

64M

SYNCHRONOUS

125 Cel

-40 Cel

64MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

YES

CMOS

BALL

BOTTOM

S70KL1282GABHM023 by Infineon Technologies

S70KL1282GABHM023

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; No. of Words: 134217728 words; Screening Level: AEC-Q100;

35 ns

200 MHz

R-PBGA-B24

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

3.6 V

2.7 V

3

YES

CMOS

BALL

BOTTOM

S70KS1282GABHM020 by Infineon Technologies

S70KS1282GABHM020

Infineon Technologies

HYPERRAM; No. of Terminals: 24; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 128MX1; Maximum Operating Temperature: 125 Cel;

35 ns

200 MHz

R-PBGA-B24

134217728 bit

HYPERRAM

1

3

1

1

24

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX1

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

AEC-Q100

2 V

1.7 V

1.8

YES

CMOS

BALL

BOTTOM