Loading...

50 DRAM 2

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
W9816G6JH-6I by Winbond Electronics

W9816G6JH-6I

Winbond Electronics

W9816G6JH-6I by Winbond Electronics is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data processing in a compact package.

DUAL BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PDSO-G50

20.95 mm

16777216 bit

SYNCHRONOUS DRAM

16

1

1

50

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

IS42S16100C1-7TL by Integrated Silicon Solution

IS42S16100C1-7TL

Integrated Silicon Solution

IS42S16100C1-7TL by Integrated Silicon Solution is a 1MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features dual bank page burst access mode and supports sequential burst lengths of 1,2,4,8. Ideal for applications requiring high-speed memory solutions in commercial temperature grade environments.

DUAL BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G50

e3

20.95 mm

16777216 bit

SYNCHRONOUS DRAM

16

1

1

50

1048576 words

1M

SYNCHRONOUS

70 Cel

0 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP50,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

140 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm