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40 DRAM 3

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
TMS45169-70DZ by Texas Instruments

TMS45169-70DZ

Texas Instruments

TMS45169-70DZ by Texas Instruments is a 256Kx16 EDO DRAM with 70ns access time, 512 refresh cycles, and 3-STATE output. It operates at a voltage of 5V and has a max standby current of 0.001A. Commonly used in commercial applications requiring high-speed memory solutions.

70 ns

COMMON

R-PDSO-J40

4194304 bit

EDO DRAM

16

40

262144 words

256K

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

YES

.001 Amp

DRAMs

160 mA

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

TMS48C121-10DZ by Texas Instruments

TMS48C121-10DZ

Texas Instruments

TMS48C121-10DZ by Texas Instruments is a 128Kx8 DRAM with 131072 words, operating at 5V. It features an asynchronous mode, 100ns access time, and 512 refresh cycles. Ideal for video applications due to its small outline package and CMOS technology.

FAST PAGE

100 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; 256 X 8 SAM PORT

R-PDSO-J40

26.035 mm

1048576 bit

VIDEO DRAM

8

1

2

40

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

512

3.76 mm

.01 Amp

Other Memory ICs

95 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm

TMS44165-70DZ by Texas Instruments

TMS44165-70DZ

Texas Instruments

TMS44165-70DZ by Texas Instruments is a 256Kx16 DRAM with 70ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for applications requiring fast page access in commercial temperature grades.

FAST PAGE

70 ns

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

COMMON

R-PDSO-J40

26.035 mm

4194304 bit

FAST PAGE DRAM

16

1

1

40

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ40,.44

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

1024

3.76 mm

NO

.001 Amp

DRAMs

120 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

10.16 mm