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22 DRAM 1

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
TMS4030JL by Texas Instruments

TMS4030JL

Texas Instruments

TMS4030JL by Texas Instruments is a 4Kx1 DRAM with 4096-bit memory density, 300ns max access time, and 64 refresh cycles. It has separate I/O type and operates in commercial temperature range. Ideal for applications requiring low-power memory solutions in industrial electronics.

300 ns

SEPARATE

R-XDIP-T22

4096 bit

1

22

4096 words

4K

70 Cel

0 Cel

4KX1

3-STATE

CERAMIC

DIP

DIP22,.4

RECTANGULAR

IN-LINE

NOT SPECIFIED

Not Qualified

64

Other Memory ICs

60 mA

NO

MOS

COMMERCIAL

THROUGH-HOLE

2.54 mm

DUAL

NOT SPECIFIED