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180 DRAM 12

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT61K512M32KPA-16:B by Micron Technology

MT61K512M32KPA-16:B

Micron Technology

Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

NOT SPECIFIED

12 mm

MT61K512M32KPA-14:BTR by Micron Technology

MT61K512M32KPA-14:BTR

Micron Technology

GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.3905 V

1.3095 V

1.35

YES

CMOS

BALL

.75 mm

BOTTOM

NOT SPECIFIED

12 mm

MT61K512M32KPA-16:BTR by Micron Technology

MT61K512M32KPA-16:BTR

Micron Technology

Micron Technology's MT61K512M32KPA-16:BTR is a GDDR6 DRAM with 512MX32 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH, IT ALSO REQUIRES 1.25V SUPPLY

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.3905 V

1.3095 V

1.35

YES

CMOS

BALL

.75 mm

BOTTOM

NOT SPECIFIED

12 mm

MT61K256M32JE-12:A by Micron Technology

MT61K256M32JE-12:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 14 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

e1

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

12 mm

MT61K256M32JE-13:A by Micron Technology

MT61K256M32JE-13:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

e1

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.3905 V

1.3095 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

12 mm

MT61K256M32JE-14:A by Micron Technology

MT61K256M32JE-14:A

Micron Technology

Micron Technology's MT61K256M32JE-14:A is a 256MX32 DRAM with synchronous operation and self-refresh capability. It features a memory density of 8Gb, operates at 1.25V, and has a peak reflow temperature of 260°C. Ideal for applications requiring high-speed data processing in graphics systems or other memory-intensive tasks.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

e1

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

12 mm

MT61M256M32JE-10N:A by Micron Technology

MT61M256M32JE-10N:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM MODULE

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

BALL

.75 mm

BOTTOM

30

12 mm

MT61M256M32JE-12N:A by Micron Technology

MT61M256M32JE-12N:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words: 268435456 words;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM MODULE

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

BALL

.75 mm

BOTTOM

30

12 mm

MT61M256M32JE-12NIT:A by Micron Technology

MT61M256M32JE-12NIT:A

Micron Technology

SYNCHRONOUS GRAPHICS RAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.25;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B180

14 mm

8589934592 bit

SYNCHRONOUS GRAPHICS RAM MODULE

32

1

1

180

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

30

12 mm

MT61K512M32KPA-14:B by Micron Technology

MT61K512M32KPA-14:B

Micron Technology

Micron Technology's MT61K512M32KPA-14:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; ALSO OPERATES AT 1.35 V

COMMON

R-PBGA-B180

14 mm

17179869184 bit

GDDR6 DRAM

32

1

1

180

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

OTHER

BALL

.75 mm

BOTTOM

12 mm

MT61M256M32JE-10AAT:A by Micron Technology

MT61M256M32JE-10AAT:A

Micron Technology

GDDR6 DRAM; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.2125 V; Memory Density: 8589934592 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

16

1500 MHz

COMMON

R-PBGA-B180

14 mm

8589934592 bit

GDDR6 DRAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

12 mm

MT61M256M32JE-12AAT:A by Micron Technology

MT61M256M32JE-12AAT:A

Micron Technology

Micron Technology's MT61M256M32JE-12AAT:A is a GDDR6 DRAM with 256MX32 organization, operating at up to 1500 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for high-performance applications requiring fast memory access and data processing.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

16

1500 MHz

COMMON

R-PBGA-B180

14 mm

8589934592 bit

GDDR6 DRAM

32

1

1

180

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA180,14X18,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.2875 V

1.2125 V

1.25

YES

CMOS

BALL

.75 mm

BOTTOM

12 mm