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168 DRAM 102

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT9LSDT1672G-133G2 by Micron Technology

MT9LSDT1672G-133G2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

1207959552 bit

SYNCHRONOUS DRAM MODULE

72

168

16777216 words

16M

55 Cel

0 Cel

16MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.018 Amp

DRAMs

2790 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT8LSDT1664AY-133G3 by Micron Technology

MT8LSDT1664AY-133G3

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

1073741824 bit

SYNCHRONOUS DRAM MODULE

64

168

16777216 words

16M

70 Cel

0 Cel

16MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.016 Amp

DRAMs

2480 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT16LSDT3264AY-133G3 by Micron Technology

MT16LSDT3264AY-133G3

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Code: DIMM; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

5.4 ns

133 MHz

COMMON

R-PDMA-N168

2147483648 bit

SYNCHRONOUS DRAM MODULE

64

168

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM168

RECTANGULAR

MICROELECTRONIC ASSEMBLY

3.3

Not Qualified

4096

.032 Amp

DRAMs

4960 mA

3.3

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT42L64M32D1LF-18IT:C by Micron Technology

MT42L64M32D1LF-18IT:C

Micron Technology

Micron Technology's MT42L64M32D1LF-18IT:C is a LPDDR2 DRAM with 168 terminals, operating at 533 MHz. It has a memory density of 2147483648 bits and supports sequential burst lengths of 4, 8, and 16. Ideal for industrial applications requiring high-speed data processing in temperatures ranging from -40 to 85°C.

5.5 ns

533 MHz

COMMON

4,8,16

S-PBGA-B168

2147483648 bit

LPDDR2 DRAM

168

85 Cel

-40 Cel

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

1.2,1.8

Not Qualified

8192

4,8,16

.000025 Amp

DRAMs

220 mA

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MT46H128M32L2KQ-5IT:A by Micron Technology

MT46H128M32L2KQ-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

.75 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT46H256M32L4JV-5IT:A by Micron Technology

MT46H256M32L4JV-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT46H256M32L4JV-6IT:A by Micron Technology

MT46H256M32L4JV-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32LFMA-5IT:A by Micron Technology

MT46H64M32LFMA-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Memory Density: 2147483648 bit;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

.7 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32LFMA-6IT:A by Micron Technology

MT46H64M32LFMA-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.7 mm

YES

2,4,8,16

.01 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT42L64M32D1KL-3IT:A by Micron Technology

MT42L64M32D1KL-3IT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR2 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-25 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT44K16M36RB-093:A by Micron Technology

MT44K16M36RB-093:A

Micron Technology

Micron Technology's MT44K16M36RB-093:A is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-093E:A by Micron Technology

MT44K16M36RB-093E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 603979776 bit; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-093EIT:A by Micron Technology

MT44K16M36RB-093EIT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-107E:A by Micron Technology

MT44K16M36RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Terminal Form: BALL;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-125:A by Micron Technology

MT44K16M36RB-125:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words: 16777216 words; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-125E:A by Micron Technology

MT44K16M36RB-125E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093:A by Micron Technology

MT44K32M18RB-093:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): 30; Memory Width: 18;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-093E:A by Micron Technology

MT44K32M18RB-093E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 18; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-093EIT:A by Micron Technology

MT44K32M18RB-093EIT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; Memory Width: 18;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093IT:A by Micron Technology

MT44K32M18RB-093IT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107:A by Micron Technology

MT44K32M18RB-107:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words Code: 32M; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:A by Micron Technology

MT44K32M18RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-125:A by Micron Technology

MT44K32M18RB-125:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125E:A by Micron Technology

MT44K32M18RB-125E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Self Refresh: YES; Memory Width: 18;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125EIT:A by Micron Technology

MT44K32M18RB-125EIT:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 18; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT46H128M32L2KQ-5WT:B by Micron Technology

MT46H128M32L2KQ-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

.75 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

12 mm

MT46H128M32L2KQ-6WT:B by Micron Technology

MT46H128M32L2KQ-6WT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6WT:B is a DDR1 DRAM with 128MX32 organization, operating at 166 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.75 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT46H32M32LFMA-5IT:B by Micron Technology

MT46H32M32LFMA-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

14 mm

1073741824 bit

DDR1 DRAM

32

1

1

168

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.8 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

14 mm

MT46H64M32LFMA-5WT:B by Micron Technology

MT46H64M32LFMA-5WT:B

Micron Technology

Micron Technology's MT46H64M32LFMA-5WT:B is a DDR1 DRAM with 64MX32 organization, operating at 200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

2147483648 bit

DDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-20 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.7 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT42L128M32D2KL-25IT:A by Micron Technology

MT42L128M32D2KL-25IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Minimum Supply Voltage (Vsup): 1.7 V;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L128M32D2KL-3IT:A by Micron Technology

MT42L128M32D2KL-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.8; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L192M32D3LE-3IT:A by Micron Technology

MT42L192M32D3LE-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Width: 12 mm; Self Refresh: YES;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

6442450944 bit

LPDDR2 DRAM

32

1

1

168

201326592 words

192M

SYNCHRONOUS

192MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D4KP-25IT:A by Micron Technology

MT42L256M32D4KP-25IT:A

Micron Technology

Micron Technology's MT42L256M32D4KP-25IT:A is a LPDDR2 DRAM with 256MX32 organization, operating at 1.8V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D4KP-3IT:A by Micron Technology

MT42L256M32D4KP-3IT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Access Mode: MULTI BANK PAGE BURST;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT44K16M36RB-125F:A by Micron Technology

MT44K16M36RB-125F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Self Refresh: YES; Terminal Pitch: 1 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125F:A by Micron Technology

MT44K32M18RB-125F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Width: 13.5 mm; No. of Words: 33554432 words;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT46H128M32L2KQ-5IT:B by Micron Technology

MT46H128M32L2KQ-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: FOUR BANK PAGE BURST;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT42L128M32D1LF-25WT:A by Micron Technology

MT42L128M32D1LF-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY

400 MHz

COMMON

4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.75 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D2LG-25WT:A by Micron Technology

MT42L256M32D2LG-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H256M32L4JV-5WT:B by Micron Technology

MT46H256M32L4JV-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

DDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

MT42L16M32D1LG-25AAT:A by Micron Technology

MT42L16M32D1LG-25AAT:A

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .8 mm; Terminal Form: BALL;

FOUR BANK PAGE BURST

5.5 ns

SELF REFRESH

S-PBGA-B168

e1

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT16LSDT6464AY-13ED2 by Micron Technology

MT16LSDT6464AY-13ED2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 168; Package Shape: RECTANGULAR; Terminal Position: DUAL; No. of Words Code: 64M;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XDMA-N168

e4

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

168

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

MT46H128M32L2KQ-6IT:B by Micron Technology

MT46H128M32L2KQ-6IT:B

Micron Technology

Micron Technology's MT46H128M32L2KQ-6IT:B is a DDR1 DRAM with 128MX32 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. This memory IC has a max access time of 5ns and is ideal for applications requiring high-speed data processing in industrial environments.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H256M32L4JV-5IT:B by Micron Technology

MT46H256M32L4JV-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

8589934592 bit

DDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H256M32L4JV-6WT:B by Micron Technology

MT46H256M32L4JV-6WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Maximum Access Time: 5 ns;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

8589934592 bit

DDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT46H256M32L4SA-48WT:C by Micron Technology

MT46H256M32L4SA-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

5 ns

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

8589934592 bit

LPDDR1 DRAM

32

168

268435456 words

256M

85 Cel

-25 Cel

256MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

30

MT46H64M32LFMA-5IT:B by Micron Technology

MT46H64M32LFMA-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

2147483648 bit

DDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32L2JG-5IT:A by Micron Technology

MT46H64M32L2JG-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.9 mm

YES

2,4,8,16

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm