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DDR5 DRAM DRAM 1

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT60B1G16HC-48B:A by Micron Technology

MT60B1G16HC-48B:A

Micron Technology

Micron Technology's MT60B1G16HC-48B:A is a DDR5 DRAM with 1GX16 organization, operating at 2403.8 MHz clock frequency. It features 8192 refresh cycles and supports multi-bank page burst access mode. This memory module is suitable for high-performance applications requiring fast synchronous operation in a compact grid array package.

MULTI BANK PAGE BURST

SELF REFRESH

2403.8 MHz

COMMON

R-PBGA-B102

14 mm

17179869184 bit

DDR5 DRAM

16

1

1

102

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA102,9X17,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

1 mm

YES

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm