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Ween Semiconductors Transient Suppression Devices 1

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
P1KSMBJ68AJ by Ween Semiconductors

P1KSMBJ68AJ

Ween Semiconductors

P1KSMBJ68AJ by Ween Semiconductors is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a breakdown voltage of 68V and clamping voltage of 92V. It has a max power dissipation of 6.5W, making it suitable for transient suppression in electronic circuits operating b/w -65°C to 150°C. This small outline device with dual terminals is designed for surface mount applications requiring high peak reverse power dissipation up to 1000W.

EXCELLENT CLAMPING CAPABILITY

71.4 V

64.6 V

68 V

92 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

3.5 V

R-PDSO-C2

e3

1

1000 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

UNIDIRECTIONAL

6.5 W

IEC-60134; IEC-61643-321; IEC-61000-4-2, 4-4

58.1 V

1 uA

58.1 V

YES

AVALANCHE

TIN

C BEND

DUAL

10