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P1KSMBJ68AJ

Ween Semiconductors

P1KSMBJ68AJ by Ween Semiconductors

P1KSMBJ68AJ by Ween Semiconductors is a unidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a breakdown voltage of 68V and clamping voltage of 92V. It has a max power dissipation of 6.5W, making it suitable for transient suppression in electronic circuits operating b/w -65°C to 150°C. This small outline device with dual terminals is designed for surface mount applications requiring high peak reverse power dissipation up to 1000W.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,427 parts In-Stock

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7,427

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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AZTECH Wire

Italy . 576 parts In-Stock

1+ parts

$17.670

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576

$17.670

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Continental Prestige Electronics

USA . 4,265 parts In-Stock

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4,265

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Argo Parts USA

USA . 4,134 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Aztec Data Supply Inc.

USA . 304 parts In-Stock

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304

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Overview

Enhance the performance and reliability of your electronic devices with the P1KSMBJ68AJ by Ween Semiconductors. As a leading manufacturer in the industry, Ween Semiconductors delivers top-notch quality in transient suppression devices like never before. This product is designed to protect your valuable equipment from voltage spikes and surges, ensuring smooth operation and longevity. The P1KSMBJ68AJ is versatile and can be used in a wide range of applications, providing customers with peace of mind knowing their electronics are safeguarded. Trust Ween Semiconductors to bring you innovation, durability, and value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the device, ensuring a long lifespan in various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

High power dissipation capability makes this device suitable for handling transient surges and spikes, offering reliable protection for sensitive electronics.

Nominal Breakdown Voltage: 68 V

With a breakdown voltage of 68 V, this device effectively clamps voltage surges to a safe level, preventing damage to connected equipment.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal leakage, contributing to the efficiency and effectiveness of the transient suppression device.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable performance in a variety of operating conditions, making this device a versatile choice for different applications.

Technical Specifications

Transient Suppression Devices P1KSMBJ68AJ attributes and parameters. Explore more Transient Suppression Devices devices from Ween Semiconductors

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.4 V

Minimum Breakdown Voltage:

64.6 V

Nominal Breakdown Voltage:

68 V

Maximum Clamping Voltage:

92 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

IEC-60134; IEC-61643-321; IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

58.1 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58.1 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

10

Trade Compliance

P1KSMBJ68AJ Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Ween Semiconductors

WeEn Semiconductors Co., Ltd was registered as a company on Aug 5, 2015. WeEn’s global footprint has an operational headquarters in Shanghai and wholly owned subsidiaries and centers in Jilin & Hongkong, north east China (Front-End Fabrication) Shanghai and Manchester, UK (Research & Development) , Dongguan(Warehouse and Distribution), and cities throughout the world (Sales Offices and Customer Service Access). In September 2018, WeEn added its new, in-house, reliability and failure analysis laboratory in Nanchang, Jiangxi Province, China. With a heritage of over 50 years in semiconductor development and manufacturing, WeEn as a key player has focused on developing a wide and deep portfolio of industry-leading power products including Silicon Carbide Power Devices, Silicon Controlled Rectifiers and Triacs, standard and fast recovery Power Diodes , TVS and ESD protection Devices and IGBTs and modules. All these products are widely used in the markets for telecommunications, computers, consumer electronics, intelligent home appliances, lighting, automotive and power management applications. WeEn seeks to help our customers achieve improved cost and production efficiency and contribute to the development of global intelligent manufacturing.

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