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Sangdest Microelectronics (Nanjing) Transient Suppression Devices 1

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
SMBJ60ATR by Sangdest Microelectronics (Nanjing)

SMBJ60ATR

Sangdest Microelectronics (Nanjing)

SMBJ60ATR by Sangdest Microelectronics (Nanjing) is a single-configured, surface mount transient suppression device with a max non-repetitive peak reverse power dissipation of 600W. It has a breakdown voltage of 70.2V and is commonly used for voltage clamping in electronic circuits.

EXCELLENT CLAMPING CAPABILITY

73.7 V

66.7 V

70.2 V

96.8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

DO-214AA

R-PDSO-C2

600 W

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

UNIDIRECTIONAL

MIL-STD-750

60 V

5 uA

60 V

YES

AVALANCHE

C BEND

DUAL

NOT SPECIFIED