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SMBJ60ATR

Sangdest Microelectronics (Nanjing)

SMBJ60ATR by Sangdest Microelectronics (Nanjing)

SMBJ60ATR by Sangdest Microelectronics (Nanjing) is a single-configured, surface mount transient suppression device with a max non-repetitive peak reverse power dissipation of 600W. It has a breakdown voltage of 70.2V and is commonly used for voltage clamping in electronic circuits.

Median Price

$0.166

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 151 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

-

10k+ parts

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151

$0.166

-

-

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ComSIT Distribution GmbH

Germany . 10,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10,000

-

-

-

-

ComSIT USA

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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10,000

-

-

-

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Vyrian

USA . 226 parts In-Stock

1+ parts

-

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1k+ parts

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226

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 6,035 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

-

10k+ parts

$0.159

6,035

$0.162

-

-

$0.159

Argo Parts USA

USA . 6,034 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

-

10k+ parts

$0.157

6,034

$0.162

-

-

$0.157

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.163

100+ parts

-

1k+ parts

$0.156

10k+ parts

-

2,000

$0.163

-

$0.156

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

$0.158

10k+ parts

$0.155

100

$0.166

-

$0.158

$0.155

Corohmni

South Africa . 376 parts In-Stock

1+ parts

$0.179

100+ parts

-

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-

10k+ parts

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376

$0.179

-

-

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Ampacity Inc.

Singapore . 252 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

252

$1.010

-

-

-

Semicontronic

India . 3,039 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

10k+ parts

-

3,039

$2.010

$1.960

$1.950

-

AZTECH Wire

Italy . 721 parts In-Stock

1+ parts

$15.849

100+ parts

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721

$15.849

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-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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100+ parts

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90,000

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CPlus Electronics

USA . 67,622 parts In-Stock

1+ parts

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67,622

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Kepictronics

USA . 55,000 parts In-Stock

1+ parts

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100+ parts

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55,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

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10,000

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A-Z Elektronik GmbH

Germany . 9,000 parts In-Stock

1+ parts

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100+ parts

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9,000

-

-

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Alle Elektronik GmbH

Germany . 2,470 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,470

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Glotronic Ltd.

UK . 1,760 parts In-Stock

1+ parts

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100+ parts

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1,760

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Overview

Discover the SMBJ60ATR, a high-quality Transient Suppression Device by Sangdest Microelectronics (Nanjing). With its single configuration and surface mount feature, this product is designed to protect against power surges, making it ideal for various applications. But what sets it apart is its exceptional value and benefits to customers. With a maximum non-repetitive peak reverse power dissipation of 600W and a maximum clamping voltage of 96.8V, this diode ensures reliable protection while maintaining optimum performance. Trust Sangdest Microelectronics (Nanjing) for top-notch manufacturing standards and experience the advantages of the SMBJ60ATR firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various applications.

Config: SINGLE

This configuration ensures simplicity and ease of installation, making it an ideal choice for users.

Surface Mount: YES

With surface mount capability, this device can be easily mounted on circuit boards, saving valuable space.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability allows the product to handle transient events effectively, providing excellent protection for sensitive electronic components.

Nominal Breakdown Voltage: 70.2 V

This voltage value ensures that the device will activate and divert surges above this threshold, safeguarding the electronics from potential damage.

Maximum Reverse Current: 5 uA

The low reverse current helps maintain the integrity of the circuit by minimizing leakage and ensuring efficient operation.

Package Shape: RECTANGULAR

This shape promotes easy integration into existing systems and provides a compact form factor for space-constrained environments.

Reverse Test Voltage: 60 V

The reverse test voltage ensures that the device can handle voltage spikes in the reverse direction, enhancing its reliability.

No. of Terminals: 2

The two terminals enable straightforward connectivity and installation, making the product user-friendly.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes it suitable for applications requiring miniaturization without compromising the device's functionality.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the product's reliability and performance under demanding conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows the device to operate reliably in extreme cold environments.

Terminal Position: DUAL

The dual terminal position facilitates flexible installation options and accommodates different circuit board layouts.

Minimum Breakdown Voltage: 66.7 V

The minimum breakdown voltage guarantees that the device is effective in clamping voltage surges above this value, safeguarding sensitive components.

Maximum Breakdown Voltage: 73.7 V

The maximum breakdown voltage ensures that the device will not trigger unnecessarily, reducing the risk of false activations.

Reference Standard: MIL-STD-750

Complying with this standard ensures high-quality manufacturing and reliability, making it a trusted choice for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type provides effective voltage spike suppression, protecting sensitive electronics from transient events.

Technology: AVALANCHE

The avalanche technology provides high surge handling capability, ensuring efficient protection against transient disturbances.

Terminal Form: C BEND

The C bend terminal form facilitates convenient soldering and secure connection, enabling reliable operation.

No. of Elements: 1

With a single element, this device simplifies the design and installation process, offering a cost-effective solution.

Maximum Repetitive Peak Reverse Voltage: 60 V

The maximum repetitive peak reverse voltage ensures that the product can withstand repeated surge events with high reliability.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that the device only clamps voltages in one direction, effectively protecting components from transients.

Maximum Clamping Voltage: 96.8 V

The maximum clamping voltage indicates the highest voltage the device will allow during a surge, preventing damage to the connected equipment.

Diode Element Material: SILICON

The silicon-based diode element material ensures high performance, stability, and reliability in suppressing transients.

Technical Specifications

Transient Suppression Devices SMBJ60ATR attributes and parameters. Explore more Transient Suppression Devices devices from Sangdest Microelectronics (Nanjing)

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

73.7 V

Minimum Breakdown Voltage:

66.7 V

Nominal Breakdown Voltage:

70.2 V

Maximum Clamping Voltage:

96.8 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

MIL-STD-750

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SMBJ60ATR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Sangdest Microelectronics (Nanjing)

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 48,254 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, Analog, MEMS and Sensors Group

Marco Cassis

President, Automotive and Discrete Group

Marco Maria Monti

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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