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ROUND PIN Diodes 9

PIN Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Maximum Diode Forward Resistance Diode Resistive Test Current Diode Resistive Test Frequency Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Nominal Minority Carrier Lifetime Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
DC2011A by Gec Plessey Semiconductors

DC2011A

Gec Plessey Semiconductors

DC2011A by Gec Plessey Semiconductors is a PIN diode for high frequency to Ku band applications. With a max diode capacitance of 0.2 pF, it offers low forward resistance of 3 ohm and can handle up to 0.25 W power dissipation. Ideal for switching operations, this surface-mount diode has a temperature range from -55°C to 150°C.

SWITCHING

100 V

SINGLE

.2 pF

SILICON

3 ohm

25 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-XUUC-N1

2 us

1

1

150 Cel

-55 Cel

UNSPECIFIED

ROUND

UNCASED CHIP

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

UPPER

DC2118A by Gec Plessey Semiconductors

DC2118A

Gec Plessey Semiconductors

DC2118A by Gec Plessey Semiconductors is a PIN diode with 0.4 pF capacitance, 1 ohm forward resistance, and 100 V breakdown voltage. It operates in high frequency to Ku band applications like attenuators, limiters, and switches. With a max power dissipation of 0.25 W and operating temperature range from -55°C to 150°C, it's ideal for microwave systems.

ATTENUATOR; LIMITER; SWITCHING

100 V

SINGLE

.4 pF

SILICON

1 ohm

100 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

.05 us

1

2

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

DC2118B by Gec Plessey Semiconductors

DC2118B

Gec Plessey Semiconductors

DC2118B by Gec Plessey Semiconductors is a PIN diode with high frequency to Ku band range. It has a max diode capacitance of 0.4 pF and operates b/w -55°C to 150°C. Ideal for attenuator, limiter, and switching applications due to its low forward resistance of 1 ohm and power dissipation of 0.25 W.

ATTENUATOR; LIMITER; SWITCHING

100 V

SINGLE

.4 pF

SILICON

1 ohm

100 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

.05 us

1

2

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

DC2552A by Gec Plessey Semiconductors

DC2552A

Gec Plessey Semiconductors

DC2552A by Gec Plessey Semiconductors is a single PIN diode for high frequency to Ku band applications. With a max diode capacitance of 0.12 pF, it operates b/w -55°C to 150°C. This round, surface-mount chip has a forward resistance of 2 ohm and can handle up to 0.25 W power dissipation in switching applications.

SWITCHING

25 V

SINGLE

.12 pF

SILICON

2 ohm

25 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-XUUC-N1

30 us

1

1

150 Cel

-55 Cel

UNSPECIFIED

ROUND

UNCASED CHIP

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

UPPER

DC2518A by Gec Plessey Semiconductors

DC2518A

Gec Plessey Semiconductors

DC2518A by Gec Plessey Semiconductors is a single PIN diode for high frequency to Ku band applications. With a max diode capacitance of 0.15 pF, it offers low forward resistance of 1 ohm and can handle up to 0.25 W power dissipation. Ideal for switching operations, this silicon-based diode operates b/w -55°C to 150°C temperature range.

SWITCHING

50 V

SINGLE

.15 pF

SILICON

1 ohm

100 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-XUUC-N1

500 us

1

1

150 Cel

-55 Cel

UNSPECIFIED

ROUND

UNCASED CHIP

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

UPPER

DC2110A by Gec Plessey Semiconductors

DC2110A

Gec Plessey Semiconductors

DC2110A by Gec Plessey Semiconductors is a PIN Diode with 0.4 pF capacitance, 2 ohm forward resistance, and 50 V breakdown voltage. Ideal for high frequency to Ku band applications like attenuators, limiters, and switches. Operates b/w -55°C to 150°C temperature range.

ATTENUATOR; LIMITER; SWITCHING

50 V

SINGLE

.4 pF

SILICON

2 ohm

20 mA

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

.005 us

1

2

150 Cel

-55 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

.25 W

Not Qualified

PIN Diodes

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

MPN3404G by Onsemi

MPN3404G

Onsemi

The Onsemi MPN3404G is a PIN diode with very high frequency band, 2 pF diode capacitance, and 0.85 ohm forward resistance. Ideal for switching applications, it operates at up to 125 °C with a breakdown voltage of 20V.

HIGH VOLTAGE

SWITCHING

20 V

SINGLE

2 pF

1.3 pF

SILICON

.85 ohm

10 mA

PIN DIODE

VERY HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.4 W

Not Qualified

15 V

PIN Diodes

NO

POSITIVE-INTRINSIC-NEGATIVE

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

MPN3700G by Onsemi

MPN3700G

Onsemi

The Onsemi MPN3700G is a PIN diode with 1 pF capacitance, 20 V reverse voltage, and 1 ohm forward resistance. It is used for very high frequency switching applications at up to 125 °C. The diode features a cylindrical package with tin silver copper finish and silicon element material.

HIGH VOLTAGE

SWITCHING

200 V

SINGLE

1 pF

1 pF

SILICON

1 ohm

10 mA

PIN DIODE

VERY HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

20 V

PIN Diodes

NO

POSITIVE-INTRINSIC-NEGATIVE

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

MA4L021-120 by M/a-com Technology Solutions

MA4L021-120

M/a-com Technology Solutions

MA4L021-120 by M/a-com Tech: PIN Diode for high freq to Ku band apps. Ceramic-metal package, single config, end terminal position. Breakdown voltage 35V, max temp 175°C, positive-intrinsic-negative tech.

LOW LEAKAGE

LIMITER

35 V

SINGLE

SILICON

PIN DIODE

HIGH FREQUENCY TO KU BAND

O-CEMW-N2

1

2

175 Cel

CERAMIC, METAL-SEALED COFIRED

ROUND

MICROWAVE

NOT SPECIFIED

Not Qualified

YES

POSITIVE-INTRINSIC-NEGATIVE

NO LEAD

END

NOT SPECIFIED