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NO LEAD Microwave Mixer & Detector Diodes 14

Microwave Mixer & Detector Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band Maximum Impedance Minimum Impedance JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Minimum Tangential Signal Sensitivity Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Schottky Barrier Type
SMS7621-092 by Skyworks Solutions

SMS7621-092

Skyworks Solutions

SMS7621-092 by Skyworks Solutions is a microwave mixer diode with Schottky technology. It operates in K band frequency range, has 2 elements, and a low barrier Schottky diode element material. Ideal for applications requiring common bipolar terminal configuration and surface mount package style, with a max power dissipation of 0.075W.

2 V

COMMON BIPOLAR TERMINAL, 2 ELEMENTS

SILICON

MIXER DIODE

.32 V

K BAND

R-XBCC-N4

2

4

150 Cel

-65 Cel

.05 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.075 W

YES

SCHOTTKY

NO LEAD

BOTTOM

NOT SPECIFIED

LOW BARRIER

DMF3945-000 by Skyworks Solutions

DMF3945-000

Skyworks Solutions

The Skyworks Solutions DMF3945-000 is a complex Schottky mixer diode with 8 elements, operating up to 6 GHz in S band. Featuring a max diode capacitance of 0.5 pF, it is surface mountable and operates at temperatures up to 150°C. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.

HIGH RELIABILITY

COMPLEX

.5 pF

SILICON

MIXER DIODE

S BAND

R-XUUC-N6

8

6

6 GHz

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

Not Qualified

Microwave Mixer Diodes

YES

SCHOTTKY

NO LEAD

UPPER

NOT SPECIFIED

LOW BARRIER

SMS7621-060 by Skyworks Solutions

SMS7621-060

Skyworks Solutions

Skyworks Solutions SMS7621-060 is a single-config microwave mixer diode with Schottky technology. Operating in K band, it has low barrier Schottky element made of silicon. With 0.18 pF capacitance and 0.075 W power dissipation, it's ideal for surface mount applications requiring high frequency mixing capabilities.

SINGLE

.18 pF

SILICON

MIXER DIODE

K BAND

R-XBCC-N2

1

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

.075 W

Not Qualified

YES

SCHOTTKY

NO LEAD

BOTTOM

30

LOW BARRIER

SMS7630-061 by Skyworks Solutions

SMS7630-061

Skyworks Solutions

SMS7630-061 by Skyworks Solutions is a single-config microwave mixer diode with Schottky technology. Operating in the K band frequency, it has a max power dissipation of 0.075W and can withstand peak reflow temperature of 260°C. Ideal for applications requiring high-frequency mixing and detection in compact chip carrier packages.

SINGLE

SILICON

MIXER DIODE

K BAND

R-PBCC-N2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.075 W

Not Qualified

YES

SCHOTTKY

NO LEAD

BOTTOM

40

ZERO BARRIER

HMPS-2820-BLK by Broadcom

HMPS-2820-BLK

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-CBCC-N4

e3

1

1

4

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2820-TR1 by Broadcom

HMPS-2820-TR1

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-CBCC-N4

e3

1

1

4

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2820-TR2 by Broadcom

HMPS-2820-TR2

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-CBCC-N4

e3

1

1

4

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2822-BLK by Broadcom

HMPS-2822-BLK

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2822-TR1 by Broadcom

HMPS-2822-TR1

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2822-TR2 by Broadcom

HMPS-2822-TR2

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2825-BLK by Broadcom

HMPS-2825-BLK

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2825-TR1 by Broadcom

HMPS-2825-TR1

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2825-TR2 by Broadcom

HMPS-2825-TR2

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

4 V

SINGLE

.23 pF

SILICON

MIXER DIODE

.41 V

X BAND

R-XBCC-N2

e4

1

1

2

150 Cel

-55 Cel

.11 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.1 W

5 uA

1 V

YES

SCHOTTKY

GOLD

NO LEAD

BOTTOM

LOW BARRIER