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RECTANGULAR Microwave Mixer & Detector Diodes 52

Microwave Mixer & Detector Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band Maximum Impedance Minimum Impedance JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Minimum Tangential Signal Sensitivity Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Schottky Barrier Type
BAT6307WE6327HTSA1 by Infineon Technologies

BAT6307WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH SPEED

CATHODE

SEPARATE, 2 ELEMENTS

.85 pF

SILICON

MIXER DIODE

R-PDSO-G4

2

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT6806WE6327HTSA1 by Infineon Technologies

BAT6806WE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.

4 V

SINGLE

.23 pF

SILICON

MIXER DIODE

.41 V

X BAND

R-XBCC-N2

e4

1

1

2

150 Cel

-55 Cel

.11 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

.1 W

5 uA

1 V

YES

SCHOTTKY

GOLD

NO LEAD

BOTTOM

LOW BARRIER

BA278,115 by NXP Semiconductors

BA278,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.715 W

YES

FLAT

DUAL