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Taiwan Semiconductor Diodes & Rectifiers 117

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SS16LRVG by Taiwan Semiconductor

SS16LRVG

Taiwan Semiconductor

SS16LRVG by Taiwan Semiconductor is a Schottky rectifier diode with a max reverse voltage of 60V and forward voltage of 0.7V, ideal for efficiency applications. It has a max output current of 1A, operates b/w -55 to 150°C, and features a surface-mount package style in plastic/epoxy material.

LOW POWER LOSS

EFFICIENCY

60 V

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

400 uA

60 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

SK14BR5G by Taiwan Semiconductor

SK14BR5G

Taiwan Semiconductor

SK14BR5G by Taiwan Semiconductor is a Schottky rectifier diode with max VF of 0.5V and max output current of 1A. Operating b/w -55°C to 150°C, it has a max reverse voltage of 60V. Ideal for applications requiring high efficiency and low forward voltage drop in compact electronic devices.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AA

R-PDSO-C2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

FR103GA0G by Taiwan Semiconductor

FR103GA0G

Taiwan Semiconductor

FR103GA0G by Taiwan Semiconductor is a single rectifier diode with 200V max reverse voltage and 1A max output current. With 0.15us reverse recovery time, it operates b/w -55°C to 150°C. Ideal for applications requiring fast switching and high efficiency in plastic/epoxy packages.

HIGH RELIABILITY, LOW POWER LOSS

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-41

O-PALF-W2

e3

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

.15 us

NO

TIN

WIRE

AXIAL

10

FR103GR0G by Taiwan Semiconductor

FR103GR0G

Taiwan Semiconductor

FR103GR0G by Taiwan Semiconductor is a single rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 200V. It has a fast reverse recovery time of 0.15us, making it suitable for applications requiring efficient power conversion in temperatures ranging from -55 to 150°C. The diode's plastic/epoxy package body material and axial terminal position ensure reliable performance in various electronic circuits.

HIGH RELIABILITY, LOW POWER LOSS

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-41

O-PALF-W2

e3

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

.15 us

NO

TIN

WIRE

AXIAL

10

FR103GR1G by Taiwan Semiconductor

FR103GR1G

Taiwan Semiconductor

FR103GR1G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A. It has a max repetitive peak reverse voltage of 200V and a max reverse recovery time of 0.15us. This diode is commonly used in applications requiring high-speed switching and rectification.

HIGH RELIABILITY, LOW POWER LOSS

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-41

O-PALF-W2

e3

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

.15 us

NO

TIN

WIRE

AXIAL

10

LL5819L0 by Taiwan Semiconductor

LL5819L0

Taiwan Semiconductor

LL5819L0 by Taiwan Semiconductor is a Schottky rectifier diode with 40V peak reverse voltage and 1A output current. It comes in a plastic/epoxy package, suitable for surface mount applications. Operating temperature ranges from -65°C to 125°C, making it ideal for various electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

125 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

40 V

YES

SCHOTTKY

WRAP AROUND

END

NOT SPECIFIED

MUR820C0G by Taiwan Semiconductor

MUR820C0G

Taiwan Semiconductor

MUR820C0G by Taiwan Semiconductor is a single rectifier diode with a max reverse recovery time of 0.025 us and max output current of 8 A. It operates efficiently at temperatures ranging from -55 to 175 °C, making it ideal for applications requiring high efficiency in electronic circuits.

FREE WHEELING DIODE, HIGH RELIABILITY

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.975 V

TO-220AC

R-PSFM-T2

e3

100 A

1

1

2

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

200 V

5 uA

.025 us

NO

TIN

THROUGH-HOLE

SINGLE

10

SK54CR6 by Taiwan Semiconductor

SK54CR6

Taiwan Semiconductor

SK54CR6 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 5A and max forward voltage of 0.75V. It operates efficiently in temperatures ranging from -55 to 150°C, making it suitable for various applications requiring high efficiency and low power consumption. The diode's small outline package body material and matte tin terminal finish enhance its performance in surface mount configurations.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK56CR6 by Taiwan Semiconductor

SK56CR6

Taiwan Semiconductor

SK56CR6 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 60V. It is designed for high efficiency applications, operates b/w -55 to 150°C, and features a small outline package style for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK56CR7G by Taiwan Semiconductor

SK56CR7G

Taiwan Semiconductor

SK56CR7G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.75V and output current of 5A. It operates b/w -55°C to 150°C, ideal for applications requiring high efficiency. With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SKL13BR5G by Taiwan Semiconductor

SKL13BR5G

Taiwan Semiconductor

SKL13BR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.39V and output current of 1A. It operates b/w -55°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in compact electronic devices. The diode's small outline package with matte tin finish enables easy surface mount installation in space-constrained designs.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

.39 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK20H45B0G by Taiwan Semiconductor

SK20H45B0G

Taiwan Semiconductor

SK20H45B0G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 20A. It operates at temperatures up to 200°C, making it suitable for high-efficiency applications. With a max reverse voltage of 45V and non-repetitive peak forward current of 275A, this diode offers reliable performance in various electronic circuits.

LOW POWER LOSS

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.55 V

O-PALF-W2

e3

275 A

1

1

2

200 Cel

20 A

PLASTIC/EPOXY

ROUND

LONG FORM

45 V

500 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

RS1MLSRVG by Taiwan Semiconductor

RS1MLSRVG

Taiwan Semiconductor

RS1MLSRVG by Taiwan Semiconductor is a single rectifier diode with a max reverse recovery time of 0.3 us and max output current of 1.2 A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a peak reflow temperature of 260 C.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-F2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

1.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

.3 us

YES

MATTE TIN

FLAT

DUAL

30

S3GR6 by Taiwan Semiconductor

S3GR6

Taiwan Semiconductor

S3GR6 by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 1.15V and max output current of 3A. It is used in applications requiring fast switching and low power loss, such as power supplies and battery chargers.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AB

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-50 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

10 uA

1.5 us

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

RB520S-30RSG by Taiwan Semiconductor

RB520S-30RSG

Taiwan Semiconductor

RB520S-30RSG by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 0.2A and forward voltage of 0.6V. It operates b/w -55 to 125°C, has a breakdown voltage of 30V, and is ideal for applications requiring low power dissipation in small outline packages.

GENERAL PURPOSE

30 V

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F2

e3

1

1 A

1

1

2

125 Cel

-55 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

30 V

1 uA

10 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

RB706F-40RVG by Taiwan Semiconductor

RB706F-40RVG

Taiwan Semiconductor

RB706F-40RVG by Taiwan Semiconductor is a Schottky rectifier diode with 45V peak reverse voltage and 0.03A output current. It features a series connected, center tap configuration in a small outline package, suitable for surface mount applications up to 125°C.

HIGH RELIABILITY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

R-PDSO-G3

e3

1

2

3

125 Cel

.03 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

45 V

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

S1MLSHRVG by Taiwan Semiconductor

S1MLSHRVG

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-F2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

1.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

1000 V

5 uA

YES

MATTE TIN

FLAT

DUAL

30

TSSA5U50E3G by Taiwan Semiconductor

TSSA5U50E3G

Taiwan Semiconductor

TSSA5U50E3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 50V. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminal finish.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.54 V

DO-214AC

R-PDSO-C2

e3

1

75 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

50 V

300 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

LL4004GL0 by Taiwan Semiconductor

LL4004GL0

Taiwan Semiconductor

LL4004GL0 by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 400V. It is designed for applications requiring high temperature tolerance (-65 to 150°C) and surface mount compatibility, making it ideal for various electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

400 V

YES

WRAP AROUND

END

NOT SPECIFIED

LL4007GL0 by Taiwan Semiconductor

LL4007GL0

Taiwan Semiconductor

LL4007GL0 by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 1000V. It is designed for applications requiring high voltage rectification in electronic circuits. The diode operates b/w -65°C to 150°C, making it suitable for various temperature conditions.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

1000 V

YES

WRAP AROUND

END

NOT SPECIFIED

1SS355RRG by Taiwan Semiconductor

1SS355RRG

Taiwan Semiconductor

1SS355RRG by Taiwan Semiconductor is a fast recovery rectifier diode with 80V reverse test voltage and 0.15A output current. It has a max reverse recovery time of 0.004 us, making it suitable for applications requiring quick response times. With a package style of small outline and matte tin terminal finish, it is ideal for surface mount configurations in electronic circuits.

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

R-PDSO-F2

e3

1

.5 A

1

1

2

150 Cel

-65 Cel

.15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.2 W

IEC-61249-2-21

90 V

.1 uA

.004 us

80 V

YES

MATTE TIN

FLAT

DUAL

BAV103L0G by Taiwan Semiconductor

BAV103L0G

Taiwan Semiconductor

BAV103L0G by Taiwan Semiconductor is a single rectifier diode with a max output current of 0.2A and a max repetitive peak reverse voltage of 250V. It is commonly used in applications requiring fast switching and high voltage protection.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

200 Cel

-65 Cel

.2 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

.5 W

250 V

.05 us

YES

WRAP AROUND

END

NOT SPECIFIED

LL4001GL0G by Taiwan Semiconductor

LL4001GL0G

Taiwan Semiconductor

LL4001GL0G by Taiwan Semiconductor is a single rectifier diode with 50V peak reverse voltage and 1A output current. It operates b/w -65°C to 150°C, making it suitable for various applications in electronics requiring efficient power management in a compact round package.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

50 V

YES

WRAP AROUND

END

NOT SPECIFIED

LL4002GL0G by Taiwan Semiconductor

LL4002GL0G

Taiwan Semiconductor

LL4002GL0G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 100V. It is commonly used in applications that require diodes for rectification purposes, such as power supplies and electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

100 V

YES

WRAP AROUND

END

NOT SPECIFIED

LL4004GL0G by Taiwan Semiconductor

LL4004GL0G

Taiwan Semiconductor

LL4004GL0G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 400V. It is designed for applications requiring high temperature tolerance, ranging from -65°C to 150°C. The diode's plastic/epoxy package body material and surface mount configuration make it suitable for various electronic circuits.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

400 V

YES

WRAP AROUND

END

NOT SPECIFIED

LL4007GL0G by Taiwan Semiconductor

LL4007GL0G

Taiwan Semiconductor

LL4007GL0G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 1000V. It is designed for applications requiring high voltage rectification in electronic circuits, offering a temperature range from -65°C to 150°C. The diode's plastic/epoxy package body material and surface mount configuration make it suitable for various industrial and consumer electronics projects.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-PELF-R2

1

1

2

150 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

1000 V

YES

WRAP AROUND

END

NOT SPECIFIED

S3JBHR5G by Taiwan Semiconductor

S3JBHR5G

Taiwan Semiconductor

S3JBHR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 600V. It operates in temperatures ranging from -55 to 150°C, making it suitable for various electronic applications requiring high-performance diodes in small outline packages.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

80 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

AEC-Q101

600 V

10 uA

1.5 us

YES

MATTE TIN

C BEND

DUAL

30

SK26AHR3G by Taiwan Semiconductor

SK26AHR3G

Taiwan Semiconductor

SK26AHR3G by Taiwan Semiconductor is a Schottky rectifier diode with 60V max reverse voltage and 2A max output current. It has a forward voltage of 0.7V, ideal for efficiency applications. This single-configured diode in small outline package is suitable for surface mount technology, operating b/w -55 to 150°C.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AC

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK320BHR5G by Taiwan Semiconductor

SK320BHR5G

Taiwan Semiconductor

SK320BHR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.95V and output current of 3A. It operates b/w -55 to 150°C, ideal for efficiency applications. This single-configured diode has a max reverse current of 100uA and can handle up to 200V peak reverse voltage.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-214AA

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

200 V

100 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK34BHR5G by Taiwan Semiconductor

SK34BHR5G

Taiwan Semiconductor

SK34BHR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 3A. It operates b/w -55°C to 125°C, ideal for applications requiring high efficiency. With a package style of small outline, it is designed for surface mount assembly in various electronic devices.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AA

R-PDSO-C2

e3

1

70 A

1

1

2

125 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK54CHM6G by Taiwan Semiconductor

SK54CHM6G

Taiwan Semiconductor

SK54CHM6G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 5A. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package ideal for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.55 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK56CHR7G by Taiwan Semiconductor

SK56CHR7G

Taiwan Semiconductor

SK56CHR7G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.75V and output current of 5A. It operates b/w -55°C to 150°C, ideal for efficiency applications in automotive electronics due to its AEC-Q101 reference standard compliance. The diode's small outline package and matte tin terminal finish make it suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SS210HR5G by Taiwan Semiconductor

SS210HR5G

Taiwan Semiconductor

SS210HR5G by Taiwan Semiconductor is a Schottky rectifier diode with 100V reverse voltage and 2A output current. It operates b/w -55 to 150°C, ideal for efficiency applications. This single-configured diode comes in a small outline package suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

ES1DLHM2G by Taiwan Semiconductor

ES1DLHM2G

Taiwan Semiconductor

ES1DLHM2G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and max repetitive peak reverse voltage of 200V. It operates in temperatures ranging from -55 to 150°C, making it suitable for various electronic applications requiring fast reverse recovery time of 0.035 us. The diode's small outline package and surface mount capability enhance its versatility in circuit design.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1DLHR3G by Taiwan Semiconductor

ES1DLHR3G

Taiwan Semiconductor

ES1DLHR3G by Taiwan Semiconductor is a single rectifier diode with 200V max reverse voltage and 1A max output current. It operates b/w -55 to 150°C, making it suitable for various applications in automotive electronics, consumer electronics, and industrial equipment. This surface-mount diode has a fast reverse recovery time of 0.035 us, ideal for high-speed switching circuits.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1DLHRUG by Taiwan Semiconductor

ES1DLHRUG

Taiwan Semiconductor

ES1DLHRUG by Taiwan Semiconductor is a single rectifier diode with 200V max reverse voltage and 1A max output current. Ideal for automotive applications due to AEC-Q101 standard compliance, -55 to 150 °C operating temp range, and fast 0.035 us reverse recovery time.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

200 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1JLHRUG by Taiwan Semiconductor

ES1JLHRUG

Taiwan Semiconductor

ES1JLHRUG by Taiwan Semiconductor is a single rectifier diode with 600V max reverse voltage and 1A max output current. It has a fast 0.035 us reverse recovery time, making it ideal for high-speed applications in automotive electronics. The diode's small outline package and matte tin terminal finish ensure reliable performance in temperatures ranging from -55 to 150 °C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

S5MBHR5G by Taiwan Semiconductor

S5MBHR5G

Taiwan Semiconductor

S5MBHR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 5A and max repetitive peak reverse voltage of 1000V. It is designed for applications requiring high efficiency power conversion in small outline packages, suitable for automotive electronics due to AEC-Q101 reference standard compliance.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AA

R-PDSO-C2

e3

1

200 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

1000 V

10 uA

YES

MATTE TIN

C BEND

DUAL

SK310AHR3G by Taiwan Semiconductor

SK310AHR3G

Taiwan Semiconductor

SK310AHR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and max repetitive peak reverse voltage of 100V. It is designed for efficiency applications, operates b/w -55 to 150°C, and features a small outline package style suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AC

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK34AHR3G by Taiwan Semiconductor

SK34AHR3G

Taiwan Semiconductor

SK34AHR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.55V and output current of 3A. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. With a max repetitive peak reverse voltage of 40V, it is ideal for surface mount configurations in small outline packages.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.55 V

DO-214AC

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

BAV103L1G by Taiwan Semiconductor

BAV103L1G

Taiwan Semiconductor

BAV103L1G by Taiwan Semiconductor is a single rectifier diode with a max output current of 0.2A and a max repetitive peak reverse voltage of 250V. It has a fast max reverse recovery time of 0.05us, making it suitable for applications requiring quick switching speeds in electronic circuits. The diode is housed in a glass package with surface mount capability, ideal for use in temperature-sensitive environments with an operating range from -65°C to 200°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

O-LELF-R2

1

1

2

200 Cel

-65 Cel

.2 A

GLASS

ROUND

LONG FORM

NOT SPECIFIED

.5 W

250 V

.05 us

YES

WRAP AROUND

END

NOT SPECIFIED

TSSA5U50HE3G by Taiwan Semiconductor

TSSA5U50HE3G

Taiwan Semiconductor

TSSA5U50HE3G by Taiwan Semiconductor is a Schottky rectifier diode with a max repetitive peak reverse voltage of 50V and max output current of 5A. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. This single-configured diode is surface-mountable and features a small outline package style.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.54 V

DO-214AC

R-PDSO-C2

e3

1

75 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

50 V

300 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

S15MCHM6G by Taiwan Semiconductor

S15MCHM6G

Taiwan Semiconductor

S15MCHM6G by Taiwan Semiconductor is a single rectifier diode with a max forward voltage of 1.1V and a max output current of 15A. It is commonly used in applications that require high power rectification, such as power supplies and motor drives.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AB

R-PDSO-C2

e3

1

350 A

1

1

2

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

1000 V

1 uA

YES

MATTE TIN

C BEND

DUAL

MUR360SBHR5G by Taiwan Semiconductor

MUR360SBHR5G

Taiwan Semiconductor

MUR360SBHR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 3A and a max repetitive peak reverse voltage of 600V. It has a fast reverse recovery time of 0.05us, making it suitable for high-efficiency applications. The diode operates in temperatures ranging from -55 to 175°C, meeting AEC-Q101 standards.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-214AA

R-PDSO-C2

e3

1

75 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

10 uA

.05 us

YES

MATTE TIN

C BEND

DUAL

30

SKL13BHR5G by Taiwan Semiconductor

SKL13BHR5G

Taiwan Semiconductor

SKL13BHR5G by Taiwan Semiconductor is a Schottky rectifier diode with 30V peak reverse voltage and 1A output current. It has a small outline package, matte tin finish, and operates b/w -55°C to 125°C. Ideal for automotive applications meeting AEC-Q101 standards.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

DO-214AA

R-PDSO-C2

e3

1

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

30 V

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

ES3GBHR5G by Taiwan Semiconductor

ES3GBHR5G

Taiwan Semiconductor

ES3GBHR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 3A and forward voltage of 1.13V. It has a small outline package style, matte tin terminal finish, and operates b/w -55 to 150°C. Ideal for efficiency applications due to its fast reverse recovery time of 0.035us and low reverse current of 10uA.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.13 V

DO-214AA

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

400 V

10 uA

.035 us

YES

MATTE TIN

C BEND

DUAL

30

RS1GFSHMWG by Taiwan Semiconductor

RS1GFSHMWG

Taiwan Semiconductor

RS1GFSHMWG by Taiwan Semiconductor is a fast recovery rectifier diode with a max forward voltage of 1.3V and output current of 1A. It has a max reverse recovery time of 0.15us, making it suitable for applications requiring high-speed switching capabilities. With a package style of small outline and surface mount configuration, this diode is ideal for compact electronic designs in automotive and industrial settings.

FREE WHEELING DIODE

FAST RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

400 V

5 uA

.15 us

YES

MATTE TIN

FLAT

DUAL

30

S15MCV7G by Taiwan Semiconductor

S15MCV7G

Taiwan Semiconductor

S15MCV7G by Taiwan Semiconductor is a single rectifier diode with 1000V peak reverse voltage and 15A output current. It operates b/w -55°C to 150°C, suitable for various applications requiring high power rectification in a small outline package. With surface mount capability and C bend terminals, it offers efficient performance in compact electronic designs.

FREE WHEELING DIODE

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AB

R-PDSO-C2

e3

1

350 A

1

1

2

150 Cel

-55 Cel

15 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1000 V

1 uA

YES

TIN

C BEND

DUAL