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Taiwan Semiconductor Diodes & Rectifiers 117

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SKL13B by Taiwan Semiconductor

SKL13B

Taiwan Semiconductor

SKL13B by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.39V. It is designed for efficiency applications, operates b/w -55°C to 125°C, and has a max reverse current of 200uA.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.39 V

DO-214AA

R-PDSO-C2

e3

50 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

200 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

BAT54ARF by Taiwan Semiconductor

BAT54ARF

Taiwan Semiconductor

BAT54ARF by Taiwan Semiconductor is a Schottky rectifier diode with common anode config, 2 elements, and max output current of 0.2A. It operates b/w -55 to 150°C, has a small outline package style, and features a max reverse recovery time of 0.005us. Ideal for applications requiring fast switching and low power dissipation in compact electronic devices.

COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

R-PDSO-G3

e3

1

2

3

150 Cel

-55 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.23 W

Not Qualified

30 V

.005 us

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

30

BAT54RF by Taiwan Semiconductor

BAT54RF

Taiwan Semiconductor

BAT54RF by Taiwan Semiconductor is a Schottky rectifier diode with 30V max repetitive peak reverse voltage. It has 0.005us max reverse recovery time and 0.2A max output current, making it ideal for applications requiring fast switching and low power dissipation in small outline packages.

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-G3

e3

1

1

1

3

150 Cel

-55 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.23 W

Not Qualified

30 V

.005 us

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

30

B0530WFRHG by Taiwan Semiconductor

B0530WFRHG

Taiwan Semiconductor

B0530WFRHG by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 0.5A and a max repetitive peak reverse voltage of 30V. It is designed for applications requiring high efficiency and fast switching, making it ideal for use in electronic circuits where low power loss and high frequency operation are essential.

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

1

1

2

125 Cel

-65 Cel

.5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

BAT54SDRFG by Taiwan Semiconductor

BAT54SDRFG

Taiwan Semiconductor

BAT54SDRFG by Taiwan Semiconductor is a Schottky rectifier diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.005 us and can handle a max output current of 0.2 A. Ideal for applications requiring fast switching and low forward voltage drop, such as power supplies and battery chargers.

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.24 V

R-PDSO-G6

e3

1

4

6

150 Cel

-65 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

30 V

2 uA

.005 us

25 V

Signal Diodes

YES

SCHOTTKY

MATTE TIN OVER NICKEL

GULL WING

DUAL

30

RB520S-30RKG by Taiwan Semiconductor

RB520S-30RKG

Taiwan Semiconductor

RB520S-30RKG by Taiwan Semiconductor is a Schottky rectifier diode with 30V breakdown voltage and 0.6V forward voltage. It has a max output current of 0.2A and operates b/w -55 to 125 °C. Ideal for applications requiring low power dissipation in small outline packages.

GENERAL PURPOSE

30 V

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-F2

e3

1

1 A

1

1

2

125 Cel

-55 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.2 W

30 V

1 uA

10 V

YES

SCHOTTKY

MATTE TIN OVER NICKEL

FLAT

DUAL

S1MR2 by Taiwan Semiconductor

S1MR2

Taiwan Semiconductor

S1MR2 by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and forward voltage of 1.1V. It has a max reverse recovery time of 1.5us, making it suitable for applications requiring fast switching speeds in electronic circuits. The diode's small outline package style and surface mount capability make it ideal for compact designs where space is limited.

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AC

R-PDSO-C2

e3

1

30 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

1000 V

1.5 us

Rectifier Diodes

YES

MATTE TIN

C BEND

DUAL

10

UGF1004G by Taiwan Semiconductor

UGF1004G

Taiwan Semiconductor

UGF1004G by Taiwan Semiconductor is a common cathode diode with 2 elements, featuring a max reverse recovery time of 0.025 us and max output current of 5 A. Ideal for efficiency applications, it operates b/w -55 to 175 °C with a max forward voltage of 0.95 V.

FREE WHEELING DIODE, HIGH RELIABILITY, LOW POWER LOSS

EFFICIENCY

ISOLATED

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.95 V

TO-220AB

R-PSFM-T3

70 A

2

1

3

175 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

200 V

10 uA

.025 us

NO

PURE TIN

THROUGH-HOLE

SINGLE

MBR745C0G by Taiwan Semiconductor

MBR745C0G

Taiwan Semiconductor

MBR745C0G by Taiwan Semiconductor is a Schottky rectifier diode with max output current of 7.5A and max repetitive peak reverse voltage of 45V. It operates b/w -55 to 150°C, ideal for efficiency applications requiring low forward voltage drop (0.84V) and high reverse current (100uA).

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.84 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

7.5 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

45 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

TIN

THROUGH-HOLE

SINGLE

10

SS34R6 by Taiwan Semiconductor

SS34R6

Taiwan Semiconductor

SS34R6 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.75V. It is designed for efficiency applications, operating b/w -55°C to 150°C. This single-configured diode comes in a small outline package suitable for surface mount technology.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

SS34R7 by Taiwan Semiconductor

SS34R7

Taiwan Semiconductor

SS34R7 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.75V. It operates b/w -55 to 150°C, making it suitable for high-efficiency applications. With a peak reflow temperature of 250°C, it offers reliable performance in various electronic devices.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

SS36R6 by Taiwan Semiconductor

SS36R6

Taiwan Semiconductor

SS36R6 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.75V. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. With a peak reflow temperature of 250°C and matte tin terminal finish, it offers reliable performance in various electronic devices.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AB

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

60 V

500 uA

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

30

1N4935GR0G by Taiwan Semiconductor

1N4935GR0G

Taiwan Semiconductor

1N4935GR0G by Taiwan Semiconductor is a single rectifier diode with 200V max repetitive peak reverse voltage. It has a fast 0.2us max reverse recovery time and can handle up to 1A of output current. Ideal for applications requiring high-speed switching in temperatures ranging from -55°C to 150°C.

HIGH RELIABILITY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-204AL

O-PALF-W2

e3

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

.2 us

NO

MATTE TIN

WIRE

AXIAL

10

MBR10100C0G by Taiwan Semiconductor

MBR10100C0G

Taiwan Semiconductor

MBR10100C0G by Taiwan Semiconductor is a Schottky rectifier diode with 100V max repetitive peak reverse voltage and 10A max output current. It operates b/w -55 to 150°C, ideal for efficiency applications. The diode has a max forward voltage of 0.85V and a package style of flange mount for easy installation.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.85 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

100 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

10

HS1DLR3G by Taiwan Semiconductor

HS1DLR3G

Taiwan Semiconductor

HS1DLR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. It is designed for applications requiring fast switching speeds, such as power supplies and battery chargers. With a small outline package style and matte tin terminal finish, it operates efficiently in temperatures ranging from -55°C to 150°C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

200 V

.05 us

YES

MATTE TIN

FLAT

DUAL

30

HS1JLR3G by Taiwan Semiconductor

HS1JLR3G

Taiwan Semiconductor

HS1JLR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 600V. It has a fast max reverse recovery time of 0.075us, making it suitable for applications requiring high-speed switching such as power supplies and inverters. The diode's small outline package style and surface mount configuration make it ideal for compact electronic designs in temperatures ranging from -55°C to 150°C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

.075 us

YES

MATTE TIN

FLAT

DUAL

30

HS1MLRVG by Taiwan Semiconductor

HS1MLRVG

Taiwan Semiconductor

HS1MLRVG by Taiwan Semiconductor is a single rectifier diode with a max reverse recovery time of 0.075 us and a max output current of 1 A. It is designed for efficiency applications, operating b/w -55 to 150 °C, with a breakdown voltage of 1000 V.

LOW POWER LOSS

EFFICIENCY

1000 V

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

5 uA

.075 us

YES

MATTE TIN

FLAT

DUAL

30

ES2BM4G by Taiwan Semiconductor

ES2BM4G

Taiwan Semiconductor

ES2BM4G by Taiwan Semiconductor is a single rectifier diode with max output current of 2A and forward voltage of 0.95V. It operates efficiently at temperatures ranging from -55 to 150 °C, making it ideal for various applications requiring high performance diodes in small outline packages.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

150 V

10 uA

.035 us

YES

MATTE TIN

C BEND

DUAL

30

ES3JR6G by Taiwan Semiconductor

ES3JR6G

Taiwan Semiconductor

ES3JR6G by Taiwan Semiconductor is a single rectifier diode with 600V peak reverse voltage and 3A output current. It has a fast 0.035us reverse recovery time, making it ideal for efficiency applications. With a max operating temperature of 150°C, it is suitable for various electronic devices requiring high performance in harsh environments.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

DO-214AB

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

10 uA

.035 us

YES

MATTE TIN

C BEND

DUAL

30

ES3JR6 by Taiwan Semiconductor

ES3JR6

Taiwan Semiconductor

ES3JR6 by Taiwan Semiconductor is a single rectifier diode with 600V peak reverse voltage and 3A output current. It has a fast 0.035us reverse recovery time, making it ideal for efficiency applications. With a max operating temperature of 150°C, it is suitable for various electronic devices requiring high power rectification.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

DO-214AB

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

10 uA

.035 us

YES

MATTE TIN

C BEND

DUAL

30

ES3JR7G by Taiwan Semiconductor

ES3JR7G

Taiwan Semiconductor

ES3JR7G by Taiwan Semiconductor is a single rectifier diode with 600V peak reverse voltage and 3A output current. It has a fast 0.035 us reverse recovery time, making it ideal for efficiency applications. The diode operates b/w -55 to 150 °C and is surface mountable in a small outline package.

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

DO-214AB

R-PDSO-C2

e3

1

100 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

10 uA

.035 us

YES

MATTE TIN

C BEND

DUAL

30

MUR120SR5G by Taiwan Semiconductor

MUR120SR5G

Taiwan Semiconductor

MUR120SR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 200V. It has a small outline package style, matte tin terminal finish, and operates b/w -55°C to 175°C. Ideal for surface mount applications in electronics requiring fast reverse recovery time of 0.025 us.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

DO-214AA

R-PDSO-C2

e3

1

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

200 V

.025 us

YES

MATTE TIN

C BEND

DUAL

MBR1645C0G by Taiwan Semiconductor

MBR1645C0G

Taiwan Semiconductor

MBR1645C0G by Taiwan Semiconductor is a Schottky rectifier diode with 45V peak reverse voltage, 16A output current, and 0.63V forward voltage. It is used for efficiency applications in temperatures ranging from -55°C to 150°C.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.63 V

TO-220AC

R-PSFM-T2

e3

150 A

1

1

2

150 Cel

-55 Cel

16 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

45 V

500 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

MBR20100CTC0 by Taiwan Semiconductor

MBR20100CTC0

Taiwan Semiconductor

MBR20100CTC0 by Taiwan Semiconductor is a Schottky rectifier diode with 2 elements, common cathode configuration, and max output current of 10A. It operates b/w -55 to 150°C, has a max reverse voltage of 100V, and is used for efficiency applications.

LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.95 V

TO-220AB

R-PSFM-T3

e3

150 A

2

1

3

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

100 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

10

MBR20200CTC0 by Taiwan Semiconductor

MBR20200CTC0

Taiwan Semiconductor

MBR20200CTC0 by Taiwan Semiconductor is a Schottky rectifier diode with 200V peak reverse voltage and 10A output current. Common cathode configuration, suitable for efficiency applications at -55 to 150°C operating range. Features matte tin finish, flange mount package style, and plastic/epoxy body material.

LOW POWER LOSS

EFFICIENCY

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

1.23 V

TO-220AB

R-PSFM-T3

e3

150 A

2

1

3

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

200 V

100 uA

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

THROUGH-HOLE

SINGLE

10

S1ALR3G by Taiwan Semiconductor

S1ALR3G

Taiwan Semiconductor

S1ALR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and max repetitive peak reverse voltage of 100V. It operates b/w -55°C to 175°C, making it suitable for various electronic applications requiring efficient power management in small outline packages. With a fast reverse recovery time of 1.8µs, it is ideal for surface mount designs where space and performance are crucial.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

R-PDSO-F2

e3

1

30 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

1.8 us

Rectifier Diodes

YES

MATTE TIN

FLAT

DUAL

30

MUR360SR7G by Taiwan Semiconductor

MUR360SR7G

Taiwan Semiconductor

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-214AB

R-PDSO-C2

e3

1

75 A

1

1

2

175 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

10 uA

.05 us

YES

MATTE TIN

C BEND

DUAL

30

S2JR5G by Taiwan Semiconductor

S2JR5G

Taiwan Semiconductor

S2JR5G by Taiwan Semiconductor is a single rectifier diode with a max output current of 2A and max repetitive peak reverse voltage of 600V. It is designed for applications requiring fast switching speeds and low power loss, making it ideal for use in automotive electronics, power supplies, and industrial equipment.

GENERAL PURPOSE

SINGLE

SILICON

RECTIFIER DIODE

1.15 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

600 V

1 uA

1.5 us

YES

MATTE TIN

C BEND

DUAL

30

SK20H45A0G by Taiwan Semiconductor

SK20H45A0G

Taiwan Semiconductor

SK20H45A0G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.55V and a max output current of 20A. It is designed for efficiency applications, has a max operating temperature of 200°C, and features an isolated case connection.

LOW POWER LOSS

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.55 V

O-PALF-W2

275 A

1

1

2

200 Cel

20 A

PLASTIC/EPOXY

ROUND

LONG FORM

45 V

500 uA

NO

SCHOTTKY

PURE TIN

WIRE

AXIAL

SK24AR3G by Taiwan Semiconductor

SK24AR3G

Taiwan Semiconductor

SK24AR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.7V. It operates b/w -55°C to 150°C, making it suitable for efficiency applications. This single-configured diode has a matte tin terminal finish and can handle up to 60V reverse voltage.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AC

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK26AR3G by Taiwan Semiconductor

SK26AR3G

Taiwan Semiconductor

SK26AR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.7V and output current of 2A. It operates b/w -55°C to 150°C, suitable for efficiency applications. This single-configured diode has a peak reflow temperature of 260°C and matte tin terminal finish.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-214AC

R-PDSO-C2

e3

1

50 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK310AR3G by Taiwan Semiconductor

SK310AR3G

Taiwan Semiconductor

SK310AR3G by Taiwan Semiconductor is a Schottky rectifier diode with 100V reverse voltage, 3A output current, and 0.85V forward voltage. It is designed for efficiency applications, operates b/w -55 to 150 °C, and has a matte tin finish for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AC

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK34BR5G by Taiwan Semiconductor

SK34BR5G

Taiwan Semiconductor

SK34BR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.5V and a max output current of 3A. It is designed for efficiency applications, has a max operating temperature of 125°C, and comes in a small outline package.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.5 V

DO-214AA

R-PDSO-C2

e3

1

70 A

1

1

2

125 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

40 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK36AR3G by Taiwan Semiconductor

SK36AR3G

Taiwan Semiconductor

SK36AR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 3A and forward voltage of 0.72V. It operates b/w -55°C to 150°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin finish, ideal for surface mount designs.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.72 V

DO-214AC

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

200 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

10

SK39BR5G by Taiwan Semiconductor

SK39BR5G

Taiwan Semiconductor

SK39BR5G by Taiwan Semiconductor is a Schottky rectifier diode with max output current of 3A and max repetitive peak reverse voltage of 90V. It operates b/w -55 to 150°C, ideal for efficiency applications. This single-config diode in small outline package is surface mountable with matte tin finish.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.85 V

DO-214AA

R-PDSO-C2

e3

1

70 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

90 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

SK54BR5G by Taiwan Semiconductor

SK54BR5G

Taiwan Semiconductor

SK54BR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.75V and a max output current of 5A. It is designed for efficiency applications, has a max operating temperature of 150°C, and comes in a small outline package.

LOW POWER LOSS

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.75 V

DO-214AA

R-PDSO-C2

e3

1

120 A

1

1

2

150 Cel

-55 Cel

5 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

ES1ALR3G by Taiwan Semiconductor

ES1ALR3G

Taiwan Semiconductor

ES1ALR3G by Taiwan Semiconductor is a single rectifier diode with 150V max reverse voltage and 1A max output current. It operates b/w -55 to 150 °C, has 0.035 us reverse recovery time, and is ideal for surface mount applications in electronics.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

150 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1DLM2G by Taiwan Semiconductor

ES1DLM2G

Taiwan Semiconductor

ES1DLM2G by Taiwan Semiconductor is a single rectifier diode with 400V max reverse voltage and 1A max output current. It has a fast 0.035us reverse recovery time, making it ideal for applications requiring high-speed switching in small outline packages. Suitable for surface mount PCB designs operating b/w -55 to 150°C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1DLRUG by Taiwan Semiconductor

ES1DLRUG

Taiwan Semiconductor

ES1DLRUG by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 400V. It is designed for applications requiring fast switching speeds and high efficiency, making it ideal for use in surface mount electronic circuits operating within a temperature range of -55 to 150°C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1FLR3G by Taiwan Semiconductor

ES1FLR3G

Taiwan Semiconductor

ES1FLR3G by Taiwan Semiconductor is a single rectifier diode with 400V max reverse voltage and 1A max output current. It has a fast 0.035us reverse recovery time, making it ideal for applications requiring high-speed switching in small outline packages. Operating temperature ranges from -55 to 150°C, suitable for various electronic devices.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

400 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

ES1JLRUG by Taiwan Semiconductor

ES1JLRUG

Taiwan Semiconductor

ES1JLRUG by Taiwan Semiconductor is a single rectifier diode with 600V max reverse voltage and 1A max output current. It has a fast 0.035 us reverse recovery time, making it ideal for applications requiring high-speed switching in small outline packages. Suitable for surface mount designs, operating from -55 to 150 °C.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

600 V

.035 us

YES

MATTE TIN

FLAT

DUAL

30

RS1AR3G by Taiwan Semiconductor

RS1AR3G

Taiwan Semiconductor

RS1AR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 50V. It has a fast max reverse recovery time of 0.15us, making it suitable for applications requiring quick switching speeds in small outline packages. Ideal for use in electronics operating b/w -55°C to 150°C, this diode is surface mountable with matte tin terminal finish.

UNSPECIFIED

SINGLE

SILICON

RECTIFIER DIODE

DO-214AC

R-PDSO-C2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

250

50 V

.15 us

YES

MATTE TIN

C BEND

DUAL

30

RS1MLRUG by Taiwan Semiconductor

RS1MLRUG

Taiwan Semiconductor

RS1MLRUG by Taiwan Semiconductor is a single rectifier diode with 1000V max reverse voltage and 0.8A max output current. It has a matte tin finish, suitable for surface mount applications in electronics requiring high peak forward current of 30A.

UNSPECIFIED

SINGLE

SILICON

RECTIFIER DIODE

e3

1

30 A

1

1

2

.8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

1000 V

YES

MATTE TIN

FLAT

DUAL

30

S1BR3G by Taiwan Semiconductor

S1BR3G

Taiwan Semiconductor

S1BR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and forward voltage of 1.1V. It operates in temperatures ranging from -55°C to 175°C, making it suitable for automotive applications meeting AEC-Q101 standards. With a fast reverse recovery time of 1.5us, this surface-mount diode is ideal for high-speed switching circuits.

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AC

R-PDSO-C2

e3

1

40 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

100 V

1.5 us

Rectifier Diodes

YES

MATTE TIN

C BEND

DUAL

S1GR2 by Taiwan Semiconductor

S1GR2

Taiwan Semiconductor

S1GR2 by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and max repetitive peak reverse voltage of 400V. It is designed for applications requiring fast recovery times, such as automotive electronics (AEC-Q101 standard). The diode has a small outline package style, matte tin terminal finish, and operates in temperatures ranging from -55°C to 175°C.

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AC

R-PDSO-C2

e3

1

40 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

1.5 us

Rectifier Diodes

YES

MATTE TIN

C BEND

DUAL

S1GR3G by Taiwan Semiconductor

S1GR3G

Taiwan Semiconductor

S1GR3G by Taiwan Semiconductor is a single rectifier diode with a max output current of 1A and max repetitive peak reverse voltage of 400V. It operates in temperatures ranging from -55°C to 175°C, making it suitable for automotive applications meeting AEC-Q101 standards. With a fast reverse recovery time of 1.5us, this surface-mount diode is ideal for high-speed switching circuits.

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-214AC

R-PDSO-C2

e3

1

40 A

1

1

2

175 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

400 V

1.5 us

Rectifier Diodes

YES

MATTE TIN

C BEND

DUAL

SS13LRVG by Taiwan Semiconductor

SS13LRVG

Taiwan Semiconductor

SS13LRVG by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.5V. It operates b/w -55°C to 125°C, making it suitable for high-efficiency applications. With a reverse test voltage of 30V and small outline package style, it's ideal for compact electronic designs.

LOW POWER LOSS

EFFICIENCY

30 V

SINGLE

SILICON

RECTIFIER DIODE

.5 V

R-PDSO-F2

e3

1

30 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

400 uA

30 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

SS16LR3G by Taiwan Semiconductor

SS16LR3G

Taiwan Semiconductor

SS16LR3G by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 1A and a reverse test voltage of 60V. It is designed for efficiency applications, operates b/w -55 to 150 °C, and features a small outline package style for surface mount usage.

LOW POWER LOSS

EFFICIENCY

60 V

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

60 V

400 uA

60 V

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL