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National Semiconductor Diodes & Rectifiers 3

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
1N4149T50R by National Semiconductor

1N4149T50R

National Semiconductor

1N4149T50R by National Semiconductor is a glass diode with 0.004 us reverse recovery time. It has a max forward voltage of 1 V and repetitive peak reverse voltage of 100 V. Ideal for rectification applications due to its fast response time and low forward voltage drop.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

1

1

2

GLASS

ROUND

LONG FORM

Not Qualified

100 V

.004 us

NO

WIRE

AXIAL

BAW62T50A by National Semiconductor

BAW62T50A

National Semiconductor

BAW62T50A by National Semiconductor is a RECTIFIER DIODE with a Max Repetitive Peak Reverse Voltage of 75V and Max Forward Voltage of 1V. With a fast Max Reverse Recovery Time of 0.004 us, it is ideal for applications requiring quick switching such as power supplies and inverters.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

1

1

2

GLASS

ROUND

LONG FORM

Not Qualified

75 V

.004 us

NO

WIRE

AXIAL

BAW62T50R by National Semiconductor

BAW62T50R

National Semiconductor

BAW62T50R by National Semiconductor is a single rectifier diode with a max forward voltage of 1V and repetitive peak reverse voltage of 75V. With a fast reverse recovery time of 0.004 us, it is ideal for applications requiring efficient rectification in electronic circuits. The diode's glass package body material and axial terminal position make it suitable for various circuit designs where isolation and quick response times are crucial.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-35

O-LALF-W2

1

1

2

GLASS

ROUND

LONG FORM

Not Qualified

75 V

.004 us

NO

WIRE

AXIAL