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VS-MBRD660CTTR-M3

Vishay Intertechnology

VS-MBRD660CTTR-M3 by Vishay Intertechnology

VS-MBRD660CTTR-M3 by Vishay Intertechnology is a Schottky rectifier diode with 2 elements, common cathode configuration, and max forward voltage of 0.65V. It operates b/w -40°C to 150°C, suitable for applications requiring high output current up to 3A in surface mount designs.

Median Price

$0.167

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 72 parts In-Stock

1+ parts

$0.167

100+ parts

$0.159

1k+ parts

$0.159

10k+ parts

-

72

$0.167

$0.159

$0.159

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.350

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50

$0.350

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Vyrian

USA . 8,131 parts In-Stock

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8,131

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Distributors (Availability)

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Corohmni

South Africa . 364 parts In-Stock

1+ parts

$0.113

100+ parts

-

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364

$0.113

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Ampacity Inc.

Singapore . 72 parts In-Stock

1+ parts

$0.142

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72

$0.142

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Semicontronic

India . 72 parts In-Stock

1+ parts

$0.142

100+ parts

$0.138

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$0.138

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72

$0.142

$0.138

$0.138

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Advanced Electronics

New Zealand . 72 parts In-Stock

1+ parts

$0.167

100+ parts

$0.159

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$0.159

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72

$0.167

$0.159

$0.159

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Aztec Data Supply Inc.

USA . 81 parts In-Stock

1+ parts

$0.189

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81

$0.189

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Argo Parts USA

USA . 3,787 parts In-Stock

1+ parts

$0.350

100+ parts

-

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$0.339

3,787

$0.350

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-

$0.339

Continental Prestige Electronics

USA . 2,176 parts In-Stock

1+ parts

$0.350

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$0.343

2,176

$0.350

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$0.343

AZTECH Wire

Italy . 227 parts In-Stock

1+ parts

$12.855

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227

$12.855

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QUARKTWIN TECHNOLOGY LTD

USA . 22,581 parts In-Stock

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Eastek

USA . 4,000 parts In-Stock

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4,000

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Infinite Electronics LLP (Excess)

. 1,201 parts In-Stock

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Robosynatics

Brazil . 150 parts In-Stock

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$2.051

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$2.051

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$2.051

150

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$2.051

$2.051

$2.051

Lucentia Tech

USA . 150 parts In-Stock

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-

100+ parts

$2.051

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$2.051

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$2.051

150

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$2.051

$2.051

$2.051

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.332

10k+ parts

$0.325

50

-

$0.343

$0.332

$0.325

Overview

Enhance your electronic designs with the VS-MBRD660CTTR-M3 by Vishay Intertechnology, a top-tier manufacturer of high-quality diodes and rectifiers. This common cathode diode offers reliable performance and precise functionality in various applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 60V, this Schottky diode is ideal for efficient power management. Upgrade your projects with the superior technology and unmatched value that Vishay Intertechnology products deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the diode durable and resistant to external elements, ensuring a longer lifespan.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient current flow and better overall performance.

Package Shape: RECTANGULAR

The rectangular package shape is space-saving and easy to mount, making it convenient for various electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can withstand high heat levels, making it suitable for demanding environments.

Maximum Output Current: 3 A

The high maximum output current of 3 A ensures efficient power handling capabilities for the diode.

Technology: SCHOTTKY

The Schottky technology used in this diode provides low forward voltage drop and fast switching speeds, making it ideal for high-frequency applications.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high maximum repetitive peak reverse voltage of 60 V offers protection against reverse voltage spikes, enhancing the diode's reliability.

Technical Specifications

Diodes & Rectifiers VS-MBRD660CTTR-M3 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

GENERAL PURPOSE

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.65 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

490 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

VS-MBRD660CTTR-M3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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