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VS-6CWQ04FNPBF

Vishay Intertechnology

VS-6CWQ04FNPBF by Vishay Intertechnology

VS-6CWQ04FNPBF by Vishay Intertechnology is a Schottky rectifier diode with 40V max reverse voltage and 3.5A max output current. Common cathode config, suitable for high power applications in -40°C temp environments. Features gull wing terminals and plastic/epoxy package ideal for surface mount assembly.

Median Price

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3

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1k+

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Vyrian

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Bristol Electronics

USA . 100 parts In-Stock

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Nova Conductors

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Corohmni

South Africa . 156 parts In-Stock

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$0.116

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Aztec Data Supply Inc.

USA . 192 parts In-Stock

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$0.134

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Ampacity Inc.

Singapore . 1,148 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 636 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Continental Prestige Electronics

USA . 1,787 parts In-Stock

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Aranea Global

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Authorized Procurement Solutions

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Overview

Enhance your high-power applications with the Vishay Intertechnology VS-6CWQ04FNPBF diodes & rectifiers. Known for their superior quality and reliability, Vishay products are trusted by professionals worldwide. With a common cathode configuration and Schottky technology, this rectifier diode offers a maximum output current of 3.5A and a maximum repetitive peak reverse voltage of 40V. Designed for efficiency and performance, the VS-6CWQ04FNPBF is the solution you need for your power electronics projects. Trust in Vishay for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various environments.

Config: COMMON CATHODE, 2 ELEMENTS

The common cathode configuration with 2 elements allows for efficient and reliable circuit connections.

Surface Mount: YES

The surface-mount capability offers ease of installation and space-saving benefits for compact designs.

Package Shape: RECTANGULAR

The rectangular shape enables easy integration into circuit layouts and ensures a secure fit.

No. of Terminals: 2

With 2 terminals, the diode offers simple and straightforward connectivity for user-friendly installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards and enhances overall design flexibility.

Application: HIGH POWER

Designed for high-power applications, this diode is capable of handling demanding power requirements.

Minimum Operating Temperature: -40 °C

The wide operating temperature range makes this product suitable for use in extreme conditions.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals ensures reliable conductivity and corrosion resistance.

Terminal Position: SINGLE

The single terminal position simplifies wiring connections and enhances overall installation efficiency.

Case Connection: CATHODE

The cathode case connection design enhances circuit protection and improves overall performance.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product efficiently converts AC to DC power for various electronic applications.

Maximum Output Current: 3.5 A

With a maximum output current of 3.5 A, this diode can handle high current loads with ease.

Technology: SCHOTTKY

The Schottky technology offers low forward voltage drop and fast switching speeds for improved efficiency.

Terminal Form: GULL WING

The gull wing terminal form provides secure soldering connections for enhanced durability.

No. of Elements: 2

The 2-element design allows for versatile circuit configurations and reliable performance.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a maximum reverse voltage of 40 V, this diode provides reliable reverse voltage protection in circuits.

Maximum Non Repetitive Peak Forward Current: 500 A

The high non-repetitive peak forward current rating of 500 A ensures robust performance under transient conditions.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability for various electronic applications.

Technical Specifications

Diodes & Rectifiers VS-6CWQ04FNPBF attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

HIGH POWER

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

500 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

40 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

VS-6CWQ04FNPBF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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