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VS-31DQ04

Vishay Intertechnology

VS-31DQ04 by Vishay Intertechnology

VS-31DQ04 by Vishay Intertechnology is a Schottky rectifier diode with max output current of 3.3A and max repetitive peak reverse voltage of 40V. It operates b/w -40 to 150°C, making it suitable for applications requiring high efficiency and low forward voltage drop in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 14,156 parts In-Stock

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14,156

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Nova Conductors

Japan . 90 parts In-Stock

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90

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 69 parts In-Stock

1+ parts

$0.065

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69

$0.065

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Aztec Data Supply Inc.

USA . 3,998 parts In-Stock

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$0.193

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3,998

$0.193

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Ampacity Inc.

Singapore . 835 parts In-Stock

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$2.010

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835

$2.010

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AZTECH Wire

Italy . 650 parts In-Stock

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$13.308

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650

$13.308

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Continental Prestige Electronics

USA . 6,831 parts In-Stock

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6,831

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Argo Parts USA

USA . 4,003 parts In-Stock

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4,003

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Aranea Global

USA . 500 parts In-Stock

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500

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Perfect Parts

USA . 226 parts In-Stock

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Overview

Experience superior quality and reliability with the VS-31DQ04 by Vishay Intertechnology, a leading manufacturer in the industry. This rectifier diode offers exceptional performance and efficiency, making it ideal for a wide range of applications. From power supplies to battery chargers, this product delivers value and benefits that customers can trust. Say goodbye to downtime and hello to seamless operations with the VS-31DQ04 - your ultimate solution for all your diode and rectifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, making it a reliable choice.

Config: SINGLE

Being a single configuration simplifies the setup and installation of the diode in various applications.

Maximum Reverse Current: 1000 uA

With a low maximum reverse current, this diode efficiently blocks reverse currents in circuits.

Package Shape: ROUND

The round shape of the package allows for easy mounting and integration into electronic systems.

No. of Terminals: 2

Having two terminals simplifies the connection process and ensures proper functionality in circuits.

Package Style (Meter): LONG FORM

The long form package style offers versatility in placement and usage in different devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand a wide range of environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in cold environments.

Terminal Position: AXIAL

The axial terminal position enables easy connection and installation of the diode.

Case Connection: ISOLATED

The isolated case connection helps prevent interference and ensures stable operation in circuits.

Diode Type: RECTIFIER DIODE

This type of diode is ideal for converting AC to DC currents, making it suitable for various power supply applications.

Maximum Forward Voltage (VF): 0.71 V

With a low forward voltage, this diode has minimal power loss and is energy-efficient.

Maximum Output Current: 3.3 A

The high maximum output current makes this diode suitable for high-power applications.

Technology: SCHOTTKY

The Schottky technology offers fast switching speeds and low forward voltage drop, improving overall efficiency.

Terminal Form: WIRE

The wire terminal form allows for easy connectivity and secure attachment in electronic systems.

Maximum Repetitive Peak Reverse Voltage: 40 V

The high maximum repetitive peak reverse voltage ensures reliable performance in circuits with varying voltage levels.

Maximum Non Repetitive Peak Forward Current: 450 A

With a high non-repetitive peak forward current, this diode can handle sudden power surges without damage.

Diode Element Material: SILICON

Silicon is a common and reliable material for diode elements, ensuring stable performance and longevity.

Technical Specifications

Diodes & Rectifiers VS-31DQ04 attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

FREE WHEELING DIODE

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.71 V

JEDEC-95 Code:

DO-201AD

JESD-30 Code:

O-PALF-W2

Maximum Non Repetitive Peak Forward Current:

450 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

3.3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

1000 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

VS-31DQ04 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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