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VS-1N1188A

Vishay Intertechnology

VS-1N1188A by Vishay Intertechnology

VS-1N1188A by Vishay Intertechnology is a single rectifier diode with 400V peak reverse voltage, 40A output current, and 1.3V forward voltage. Ideal for power applications, it operates b/w -65°C to 200°C and features a metal package body for post/stud mount assembly.

Median Price

$23.930

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS Americas

USA . 11 parts In-Stock

1+ parts

$12.010

100+ parts

$8.530

1k+ parts

-

10k+ parts

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11

$12.010

$8.530

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Mouser Electronics

USA . 40 parts In-Stock

1+ parts

$23.930

100+ parts

$16.570

1k+ parts

-

10k+ parts

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40

$23.930

$16.570

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-

RS (Exports)

UK . 46 parts In-Stock

1+ parts

$26.090

100+ parts

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46

$26.090

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 75,502 parts In-Stock

1+ parts

$12.010

100+ parts

-

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75,502

$12.010

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Allen Electronics Distributors

USA . 19 parts In-Stock

1+ parts

$8.250

100+ parts

$6.700

1k+ parts

-

10k+ parts

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19

$8.250

$6.700

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QUARKTWIN TECHNOLOGY LTD

USA . 4,612 parts In-Stock

1+ parts

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4,612

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Authorized Procurement Solutions

USA . 250 parts In-Stock

1+ parts

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100+ parts

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250

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Perfect Parts

USA . 200 parts In-Stock

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200

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Overview

Unlock the power of Vishay Intertechnology's VS-1N1188A diode rectifier for your power applications. Crafted with precision and quality in mind, this single-configured diode offers a maximum output current of 40A and a maximum repetitive peak reverse voltage of 400V. Ideal for a wide range of power applications, this round-shaped diode with a post/stud mount package style ensures reliable performance in extreme temperatures from -65°C to 200°C. Trust Vishay Intertechnology to deliver superior products that exceed expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides durability and heat dissipation, making this diode suitable for high power applications.

Config: SINGLE

Single configuration simplifies installation and reduces chances of incorrect wiring.

Maximum Reverse Current: 2500 uA

Low reverse current ensures efficiency and reliability in preventing reverse flow of current.

Package Shape: ROUND

Round shape allows for easy mounting and integration into various electronic systems.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style provides secure mechanical attachment and ease of connection.

Application: POWER

Designed for power applications, this diode can handle high currents and voltages efficiently.

Maximum Operating Temperature: 200 °C

High maximum operating temperature ensures reliability in harsh environments.

Minimum Operating Temperature: -65 °C

Wide range of operating temperatures allows for use in both extreme hot and cold conditions.

Terminal Finish: TIN OVER NICKEL

Tin over nickel finish provides corrosion resistance and ensures good electrical conductivity.

Terminal Position: UPPER

Upper terminal position allows for easy connection and accessibility during installation.

Case Connection: CATHODE

Cathode case connection simplifies circuit design and layout for proper polarity.

Diode Type: RECTIFIER DIODE

Rectifier diode design allows for efficient conversion of AC to DC power in power supply circuits.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop minimizes power loss and heat generation during operation.

Maximum Output Current: 40 A

High output current rating allows for use in high power applications without the risk of overload.

Terminal Form: SOLDER LUG

Solder lug terminal form provides secure mechanical and electrical connection for reliable performance.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating ensures protection against voltage spikes and transients in the circuit.

Maximum Non Repetitive Peak Forward Current: 800 A

High peak forward current rating allows for temporary overload conditions while maintaining reliability.

Diode Element Material: SILICON

Silicon diode element material provides stable and consistent performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers VS-1N1188A attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-203AB

JESD-30 Code:

O-MUPM-D1

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

800 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

40 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

2500 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN OVER NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

VS-1N1188A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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