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VS-1N1184A

Vishay Intertechnology

VS-1N1184A by Vishay Intertechnology

VS-1N1184A by Vishay Intertechnology is a single rectifier diode with 100V peak reverse voltage and 40A output current. Ideal for power applications, it operates b/w -65°C to 200°C. The diode has a max forward voltage of 1.3V and a max reverse current of 2500uA, making it suitable for high-power circuits.

Median Price

$23.940

Lifecycle Status

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4

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 36 parts In-Stock

1+ parts

$23.940

100+ parts

$15.320

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$14.950

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36

$23.940

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TTI

USA . 400 parts In-Stock

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400

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Nova Conductors

Japan . 10 parts In-Stock

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$8.130

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10

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Vyrian

USA . 14,467 parts In-Stock

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Continental Prestige Electronics

USA . 5,583 parts In-Stock

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$8.130

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$7.967

5,583

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Netroflash

USA . 50 parts In-Stock

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$8.130

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$7.967

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50

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Ampacity Inc.

Singapore . 164 parts In-Stock

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$9.400

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$9.400

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AZTECH Wire

Italy . 213 parts In-Stock

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$14.836

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$14.836

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,372 parts In-Stock

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Argo Parts USA

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Perfect Parts

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Overview

Upgrade your power systems with the VS-1N1184A from Vishay Intertechnology, a leader in diodes & rectifiers. This high-quality rectifier diode offers a maximum output current of 40 A and a maximum repetitive peak reverse voltage of 100 V, making it perfect for power applications. With a package body material of METAL and a package shape of ROUND, this diode is designed for reliability and durability. Trust Vishay Intertechnology to provide you with superior products that deliver exceptional performance and value. Experience the difference with the VS-1N1184A today!

Feature Benefit Bullets

Package Body Material: METAL

Metal body provides durability and heat dissipation, making the diode reliable for power applications.

Maximum Reverse Current: 2500 uA

Low reverse current ensures efficient performance and prevents energy loss in the circuit.

Package Shape: ROUND

Round shape allows for easy installation and fitting in various power setups.

Package Style (Meter): POST/STUD MOUNT

Post/stud mount style enables secure mounting and connection in power systems.

Application: POWER

Designed specifically for power applications, ensuring optimal performance in high-power circuits.

Maximum Operating Temperature: 200 °C

High operating temperature range allows the diode to function reliably in diverse environmental conditions.

Minimum Operating Temperature: -65 °C

Wide range of operating temperatures ensures the diode can operate in extreme cold environments as well.

Terminal Finish: TIN OVER NICKEL

Tin over nickel finish provides corrosion resistance and good electrical conductivity for reliable connections.

Terminal Position: UPPER

Upper terminal position ensures proper orientation and easy integration into circuit layouts.

Case Connection: CATHODE

Cathode case connection ensures correct polarity and simplifies circuit design.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) in power applications.

Maximum Forward Voltage (VF): 1.3 V

Low forward voltage drop ensures efficient conduction and minimal power loss in the circuit.

Maximum Output Current: 40 A

High output current rating allows the diode to handle large electrical loads with ease.

Terminal Form: SOLDER LUG

Solder lug terminal form provides a secure and stable connection for high-power applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating provides protection against voltage spikes and surges in the circuit.

Maximum Non Repetitive Peak Forward Current: 800 A

High peak forward current rating ensures the diode can handle short-duration high-current pulses without damage.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability for power conversion applications.

Technical Specifications

Diodes & Rectifiers VS-1N1184A attributes and parameters. Explore more Diodes & Rectifiers devices from Vishay Intertechnology

Specs

Additional Features:

LOW LEAKAGE CURRENT

Application:

POWER

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.3 V

JEDEC-95 Code:

DO-203AB

JESD-30 Code:

O-MUPM-D1

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

800 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

40 A

Package Body Material:

METAL

Package Shape:

Package Style (Meter):

POST/STUD MOUNT

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

2500 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

TIN OVER NICKEL

Terminal Form:

Terminal Position:

Trade Compliance

VS-1N1184A Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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