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VESD01-02V-G-08

Vishay Intertechnology

VESD01-02V-G-08 by Vishay Intertechnology

VESD01-02V-G-08 by Vishay Intertechnology is a single avalanche diode with 1.5V breakdown voltage, ideal for transient suppression in electronics. With a max clamping voltage of 9V and 63W power dissipation, it protects against surges up to IEC-61000-4-5 standards. Its small outline package and dual terminals make it suitable for surface mount applications in various electronic devices.

Median Price

$0.118

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 77 parts In-Stock

1+ parts

$0.081

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77

$0.081

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Vyrian

USA . 63,750 parts In-Stock

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63,750

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Chip Stock

USA . 24,900 parts In-Stock

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24,900

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NAC Semi

USA . 500 parts In-Stock

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100+ parts

$0.155

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$0.125

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500

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$0.155

$0.125

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Prism Electronics

USA . 2 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 4,961 parts In-Stock

1+ parts

$0.081

100+ parts

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$0.079

4,961

$0.081

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$0.079

Argo Parts USA

USA . 2,541 parts In-Stock

1+ parts

$0.081

100+ parts

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$0.079

2,541

$0.081

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$0.079

Ampacity Inc.

Singapore . 1,126 parts In-Stock

1+ parts

$1.010

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1,126

$1.010

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AZTECH Wire

Italy . 831 parts In-Stock

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$17.654

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831

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Perfect Parts

USA . 102,997 parts In-Stock

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102,997

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Kepictronics

USA . 38,900 parts In-Stock

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38,900

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Cyclops Electronics Ltd (Excess)

UK . 1,460 parts In-Stock

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1,460

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.079

1k+ parts

$0.077

10k+ parts

$0.075

1,000

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$0.079

$0.077

$0.075

Overview

Enhance the protection of your electronic devices with the VESD01-02V-G-08 by Vishay Intertechnology. As a leading manufacturer in transient suppression devices, Vishay Intertechnology ensures top-notch quality and reliability. This single-configured device offers unmatched performance, with a maximum clamping voltage of 9V and a nominal breakdown voltage of 1.5V, making it ideal for a wide range of applications. Trust Vishay Intertechnology to provide you with the best-in-class solution for safeguarding your electronics against voltage spikes and surges. Upgrade to the VESD01-02V-G-08 today and experience peace of mind knowing your devices are protected.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 63 W

This high power dissipation capability ensures the device can handle surges effectively without damage.

Nominal Breakdown Voltage: 1.5 V

This low breakdown voltage means the device can quickly suppress transients and protect sensitive electronic components.

Maximum Operating Temperature: 125 °C

With a high operating temperature range, this device can function effectively in various environmental conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures a reliable electrical connection.

Reference Standard: IEC-61000-4-5

Compliance with this standard ensures that the device meets industry requirements for transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type is specifically designed for transient suppression applications, providing efficient protection.

Maximum Clamping Voltage: 9 V

The low clamping voltage ensures that the protected circuitry is not exposed to excessive voltages during transient events.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability for transient suppression applications.

Technical Specifications

Transient Suppression Devices VESD01-02V-G-08 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Minimum Breakdown Voltage:

1.5 V

Nominal Breakdown Voltage:

1.5 V

Maximum Clamping Voltage:

9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

63 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-5

Maximum Repetitive Peak Reverse Voltage:

1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

VESD01-02V-G-08 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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