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VEMD5160X01

Vishay Intertechnology

VEMD5160X01 by Vishay Intertechnology

Vishay Intertechnology's VEMD5160X01 is a single PIN photodiode with peak wavelength of 840nm. It operates b/w -40 to 110°C, with min reverse breakdown voltage of 20V. Ideal for infrared applications, it has nominal light current of 0.038mA and max dark current of 10nA.

Median Price

$1.740

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,004 parts In-Stock

1+ parts

$1.740

100+ parts

$0.940

1k+ parts

$0.764

10k+ parts

$0.662

3,004

$1.740

$0.940

$0.764

$0.662

Mouser Electronics

USA . 1,499 parts In-Stock

1+ parts

$1.740

100+ parts

$0.940

1k+ parts

$0.763

10k+ parts

$0.662

1,499

$1.740

$0.940

$0.763

$0.662

RS (Exports)

UK . 130 parts In-Stock

1+ parts

-

100+ parts

$1.036

1k+ parts

$0.869

10k+ parts

-

130

-

$1.036

$0.869

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 95 parts In-Stock

1+ parts

$0.667

100+ parts

-

1k+ parts

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95

$0.667

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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1,000

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Vyrian

USA . 906 parts In-Stock

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906

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 132 parts In-Stock

1+ parts

$0.880

100+ parts

-

1k+ parts

-

10k+ parts

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132

$0.880

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Perfect Parts

USA . 2,240 parts In-Stock

1+ parts

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2,240

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$0.653

1k+ parts

$0.633

10k+ parts

$0.620

100

-

$0.653

$0.633

$0.620

Overview

Enhance your optical sensing applications with the VEMD5160X01 photodiode by Vishay Intertechnology. Known for their superior quality and reliability, Vishay products are trusted by professionals worldwide. This PIN photodiode is designed for peak performance at a wavelength of 840nm, making it ideal for various optoelectronic applications. With a maximum dark current of only 10nA and a minimum reverse breakdown voltage of 20V, this photodiode offers exceptional sensitivity and accuracy. Upgrade your projects with the VEMD5160X01 and experience the unmatched value and benefits that Vishay Intertechnology brings to the table.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies setup and reduces potential for cross-talk in multi-sensor systems.

Peak Wavelength (nm): 840

Optimal sensitivity to light at 840nm, suitable for specific applications requiring this wavelength.

Optoelectronic Type: PIN PHOTODIODE

PIN photodiodes offer high sensitivity and low noise, making them ideal for precision light detection applications.

Maximum Operating Temperature: 110 °C

High maximum operating temperature allows for use in demanding environments without risk of damage.

Minimum Reverse Breakdown Voltage: 20 V

Low minimum reverse breakdown voltage provides protection against reverse current flow, ensuring long-term reliability.

Shape: SQUARE

Square shape facilitates easy integration into devices and ensures uniform light detection across the sensor surface.

Minimum Operating Temperature: -40 °C

Wide operating temperature range enables usage in both extreme cold and hot conditions.

Nominal Light Current: 0.038 mA

Stable nominal light current ensures consistent performance in detecting light signals.

Maximum Dark Current: 10 nA

Low dark current minimizes noise and enhances sensitivity in low-light conditions.

Infrared (IR) Range: YES

IR range compatibility expands the range of light wavelengths that can be detected, increasing versatility of the photodiode.

Packing Method: TR, 7 INCH

TR packaging with 7-inch reel provides convenient handling and storage for automated manufacturing processes.

Maximum Reverse Voltage: 20 V

Maximum reverse voltage capacity of 20V ensures protection against reverse bias conditions, safeguarding the photodiode from damage.

Semiconductor Material: Silicon

Silicon material offers excellent responsiveness to light and high quantum efficiency, ensuring accurate light detection.

Mounting Feature: SURFACE MOUNT

Surface mount capability simplifies installation and allows for compact integration into electronic devices.

Technical Specifications

Photodiodes VEMD5160X01 attributes and parameters. Explore more Photodiodes devices from Vishay Intertechnology

Specs

Additional Features:

AEC-Q101

Configuration:

SINGLE

Maximum Dark Current:

10 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.038 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Packing Method:

TR, 7 INCH

Peak Wavelength (nm):

840

Minimum Reverse Breakdown Voltage:

20 V

Maximum Reverse Voltage:

20 V

Semiconductor Material:

Silicon

Shape:

SQUARE

Trade Compliance

VEMD5160X01 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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