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SMCJ14AHE3/9AT

Vishay Intertechnology

SMCJ14AHE3/9AT by Vishay Intertechnology

Vishay Intertechnology's SMCJ14AHE3/9AT is a single avalanche diode with 1500W power dissipation, ideal for transient suppression applications. With a breakdown voltage of 16.4V and max clamping voltage of 23.2V, it offers reliable protection in a small outline package suitable for surface mount technology. Compliant with AEC-Q101 and UL standards, this device ensures high performance in automotive and industrial environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,949 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,949

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Nova Conductors

Japan . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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20

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 281 parts In-Stock

1+ parts

$3.010

100+ parts

-

1k+ parts

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10k+ parts

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281

$3.010

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AZTECH Wire

Italy . 259 parts In-Stock

1+ parts

$17.053

100+ parts

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1k+ parts

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10k+ parts

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259

$17.053

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Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

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10

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Overview

When it comes to protecting your electronic devices from transient voltage spikes, trust Vishay Intertechnology and their SMCJ14AHE3/9AT Transient Suppression Device. With a maximum power dissipation of 1500W and a nominal breakdown voltage of 16.4V, this diode offers top-notch quality and reliability. Ideal for automotive, industrial, and consumer applications, this UL recognized device ensures peace of mind for your sensitive electronics. Say goodbye to worrying about voltage surges with Vishay Intertechnology's SMCJ14AHE3/9AT!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the device.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Provides high level of protection against voltage spikes and surges.

Nominal Breakdown Voltage: 16.4 V

Ensures reliable and consistent performance in suppressing voltage spikes.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability for the terminals.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression applications.

Maximum Clamping Voltage: 23.2 V

Effectively clamps down voltage spikes to a safe level.

Diode Element Material: SILICON

Silicon diodes are commonly used in transient suppression devices for their reliability and performance.

Technical Specifications

Transient Suppression Devices SMCJ14AHE3/9AT attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

17.2 V

Minimum Breakdown Voltage:

15.6 V

Nominal Breakdown Voltage:

16.4 V

Maximum Clamping Voltage:

23.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Qualification:

Not Qualified

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

14 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMCJ14AHE3/9AT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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