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SMC3K26CAHM3/57

Vishay Intertechnology

SMC3K26CAHM3/57 by Vishay Intertechnology

Vishay Intertechnology's SMC3K26CAHM3/57 is a single transient suppression device with 3000W power dissipation, 30.4V breakdown voltage, and 1uA reverse current. Ideal for applications requiring bidirectional protection against voltage transients in a compact small outline package.

Median Price

$3.460

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,114 parts In-Stock

1+ parts

$3.330

100+ parts

$1.630

1k+ parts

$1.130

10k+ parts

$1.050

1,114

$3.330

$1.630

$1.130

$1.050

DigiKey

USA . 1,653 parts In-Stock

1+ parts

$3.590

100+ parts

$1.628

1k+ parts

-

10k+ parts

-

1,653

$3.590

$1.628

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 98 parts In-Stock

1+ parts

$1.043

100+ parts

-

1k+ parts

-

10k+ parts

-

98

$1.043

-

-

-

Vyrian

USA . 1,390 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,390

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.043

100+ parts

$1.023

1k+ parts

$0.991

10k+ parts

$0.970

100

$1.043

$1.023

$0.991

$0.970

Ampacity Inc.

Singapore . 1,121 parts In-Stock

1+ parts

$1.500

100+ parts

-

1k+ parts

-

10k+ parts

-

1,121

$1.500

-

-

-

Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,000

-

-

-

-

Overview

When it comes to protecting your electronic devices from voltage spikes, look no further than the Vishay Intertechnology SMC3K26CAHM3/57 transient suppression device. With a maximum non-repetitive peak reverse power dissipation of 3000W and a nominal breakdown voltage of 30.4V, this diode offers top-notch quality and reliability. Designed with a bidirectional polarity and avalanche technology, this device is perfect for a wide range of applications. Trust Vishay Intertechnology to deliver exceptional performance and peace of mind for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a durable and lightweight design, making it ideal for various applications.

Config: SINGLE

This single configuration simplifies installation and improves efficiency in protecting against voltage spikes.

Surface Mount: YES

The surface mount capability enables easy and convenient integration onto circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 3000 W

With a high power dissipation capability, this device can effectively handle transient surges without damage.

Nominal Breakdown Voltage: 30.4 V

The accurate breakdown voltage specification ensures reliable protection against overvoltage events.

Maximum Reverse Current: 1 uA

The low reverse current rating indicates minimal leakage, enhancing overall performance and safety.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, saving space in electronic applications.

Reverse Test Voltage: 26 V

The reverse test voltage rating ensures robust performance in preventing reverse current flow.

No. of Terminals: 2

The two terminals facilitate straightforward connection and installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers versatility in mounting options for various equipment.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable operation in harsh environments.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures performance in a wide range of conditions.

Terminal Finish: MATTE TIN

The matte tin finish provides a secure connection and improved solderability.

Terminal Position: DUAL

The dual terminal position allows for flexibility in installation and compatibility with different circuit layouts.

Minimum Breakdown Voltage: 28.9 V

The minimum breakdown voltage specification ensures reliable protection at lower voltage thresholds.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature specification ensures proper soldering without component damage.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for robust soldering during assembly.

Maximum Breakdown Voltage: 31.9 V

The high maximum breakdown voltage rating provides an added margin of safety in voltage protection.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliance with industry standards such as AEC-Q101 and UL recognition ensures quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures effective suppression of transient voltage spikes.

Technology: AVALANCHE

The avalanche technology offers fast response times and efficient protection against surge events.

Terminal Form: C BEND

The C bend terminal form allows for secure connections and stability during installation.

Maximum Repetitive Peak Reverse Voltage: 26 V

The high repetitive peak reverse voltage rating ensures continuous protection against reverse voltage spikes.

Polarity: BIDIRECTIONAL

The bidirectional polarity design offers protection in both directions, enhancing versatility in circuit protection.

Maximum Clamping Voltage: 42.1 V

The maximum clamping voltage specification ensures effective voltage suppression during transient events.

Diode Element Material: SILICON

The use of silicon diode element material provides reliable performance and durability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SMC3K26CAHM3/57 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Maximum Breakdown Voltage:

31.9 V

Minimum Breakdown Voltage:

28.9 V

Nominal Breakdown Voltage:

30.4 V

Maximum Clamping Voltage:

42.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

3000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

26 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

26 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMC3K26CAHM3/57 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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