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SMBJ33CAHE3/52

Vishay Intertechnology

SMBJ33CAHE3/52 by Vishay Intertechnology

Vishay Intertechnology's SMBJ33CAHE3/52 is a single bidirectional avalanche diode with 600W power dissipation, ideal for transient suppression applications. With a breakdown voltage of 38.65V and clamping voltage of 53.3V, it operates b/w -55°C to 150°C. This UL recognized device features matte tin terminals in a small outline package suitable for surface mount assembly.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 1 parts In-Stock

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Avnet

USA . 14,170 parts In-Stock

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Chip1Stop

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DF Sales Co.

USA . 10,500 parts In-Stock

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$0.045

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DF Sales Co.

USA . 10,500 parts In-Stock

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Nova Conductors

Japan . 93 parts In-Stock

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Bristol Electronics

USA . 30,750 parts In-Stock

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$0.525

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$0.263

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$0.105

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$0.066

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Chip Stock

USA . 75,500 parts In-Stock

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Vyrian

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Dan-Mar Components

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LIBRA Elektronik GmbH

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Prism Electronics

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Ampacity Inc.

Singapore . 4,448 parts In-Stock

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Netroflash

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AZTECH Wire

Italy . 609 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

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Authorized Procurement Solutions

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Overview

Looking for reliable transient suppression devices to protect your electronic circuits? Look no further than the Vishay Intertechnology SMBJ33CAHE3/52. With a maximum peak reverse power dissipation of 600W and a nominal breakdown voltage of 38.65V, this diode offers top-notch quality and performance. Whether you're in the automotive, industrial, or consumer electronics industry, this product is perfect for safeguarding your equipment from voltage spikes. Trust Vishay Intertechnology to provide you with the best-in-class components for all your protection needs. Choose the SMBJ33CAHE3/52 for peace of mind and unbeatable value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the device, ensuring a longer lifespan.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows the device to handle sudden surges effectively, protecting connected equipment.

Nominal Breakdown Voltage: 38.65 V

Optimal breakdown voltage to efficiently suppress transient voltage spikes and protect sensitive electronics.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures the device can operate effectively in various environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed diode type for superior transient voltage suppression performance.

Technical Specifications

Transient Suppression Devices SMBJ33CAHE3/52 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

40.6 V

Minimum Breakdown Voltage:

36.7 V

Nominal Breakdown Voltage:

38.65 V

Maximum Clamping Voltage:

53.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

33 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

33 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ33CAHE3/52 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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