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SMBJ188AHM3_A/I

Vishay Intertechnology

SMBJ188AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SMBJ188AHM3_A/I is a single avalanche diode with 600W power dissipation, 220V breakdown voltage, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,542 parts In-Stock

1+ parts

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2,542

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,448 parts In-Stock

1+ parts

$1.010

100+ parts

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1,448

$1.010

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Component Stockers USA

USA . 68,778 parts In-Stock

1+ parts

$2.030

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68,778

$2.030

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AZTECH Wire

Italy . 384 parts In-Stock

1+ parts

$15.796

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384

$15.796

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Argo Parts USA

USA . 4,607 parts In-Stock

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4,607

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Continental Prestige Electronics

USA . 3,024 parts In-Stock

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3,024

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Enhance your electronic devices with the SMBJ188AHM3_A/I by Vishay Intertechnology, a top-of-the-line transient suppression device designed to protect against voltage spikes and surges. Crafted with precision and quality in mind, this product ensures reliable performance and durability. Perfect for a variety of applications, this diode offers peace of mind and protection for your valuable equipment. Trust Vishay Intertechnology for superior products that deliver unmatched value and benefits to customers. Upgrade your protection today with the SMBJ188AHM3_A/I.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection for the device, making it a reliable choice for transient suppression.

Config: SINGLE

The single configuration simplifies installation and maintenance, offering ease of use for users.

Surface Mount: YES

With surface mount capability, this device can be easily integrated into various electronic circuits, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capacity ensures effective suppression of transient overvoltage events, safeguarding electronic components.

Nominal Breakdown Voltage: 220 V

The nominal breakdown voltage of 220V indicates the threshold at which the device begins to conduct, offering reliable protection against voltage spikes.

Maximum Reverse Current: 1 uA

The low reverse current ensures minimal power loss and improved efficiency during normal operation.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting, optimizing space utilization within electronic systems.

Reverse Test Voltage: 188 V

The reverse test voltage of 188V ensures effective suppression of reverse polarity events, enhancing the device's protective capabilities.

No. of Terminals: 2

With two terminals, the device can easily be connected within a circuit, simplifying installation and connection processes.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers versatility in application, allowing for integration in various electronic devices.

Technical Specifications

Transient Suppression Devices SMBJ188AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

231 V

Minimum Breakdown Voltage:

209 V

Nominal Breakdown Voltage:

220 V

Maximum Clamping Voltage:

328 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

188 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

188 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ188AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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