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SMBJ188AHE3_A/H

Vishay Intertechnology

SMBJ188AHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SMBJ188AHE3_A/H is a single avalanche diode with 600W power dissipation, 220V breakdown voltage, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to AEC-Q101 compliance and unidirectional polarity.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,974 parts In-Stock

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4,974

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 644 parts In-Stock

1+ parts

$10.885

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644

$10.885

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Argo Parts USA

USA . 5,132 parts In-Stock

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Continental Prestige Electronics

USA . 2,256 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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Overview

Experience superior protection for your electronic devices with Vishay Intertechnology's SMBJ188AHE3_A/H Transient Suppression Device. Designed with cutting-edge technology and high-quality materials, this product offers unmatched reliability and performance. Ideal for a wide range of applications, this device ensures that your equipment is safeguarded against voltage spikes and surges, providing peace of mind and longevity to your investments. Trust Vishay Intertechnology for top-of-the-line solutions that deliver exceptional value and protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the device, ensuring longevity and reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability of this device allows it to handle transient surges effectively and protect connected equipment.

Nominal Breakdown Voltage: 220 V

The breakdown voltage specification indicates the level at which the device can start conducting and shunting excess voltage away from sensitive components, ensuring their safety.

Maximum Reverse Current: 1 uA

The low reverse current helps in maintaining the efficiency of the device and minimizes power loss during normal operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows this device to function reliably in a variety of environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures that the device can work effectively even in cold environments without risking damage or malfunction.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good solderability for easy integration into circuit boards during manufacturing.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures fast response times and efficient suppression of voltage transients, making this device an effective solution for protecting sensitive electronics.

Technical Specifications

Transient Suppression Devices SMBJ188AHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

231 V

Minimum Breakdown Voltage:

209 V

Nominal Breakdown Voltage:

220 V

Maximum Clamping Voltage:

328 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

188 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

188 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ188AHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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