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SMBJ170CAHE3_A/I

Vishay Intertechnology

SMBJ170CAHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SMBJ170CAHE3_A/I is a Transient Suppression Device with 600W power dissipation, 199V breakdown voltage, and 1uA reverse current. Ideal for protecting electronic circuits from voltage spikes in automotive applications due to its AEC-Q101 reference standard and bidirectional polarity.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,315 parts In-Stock

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2,315

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Nova Conductors

Japan . 67 parts In-Stock

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67

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 743 parts In-Stock

1+ parts

$19.783

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743

$19.783

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Argo Parts USA

USA . 3,522 parts In-Stock

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3,522

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Continental Prestige Electronics

USA . 2,387 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Overview

Enhance your electronics with the SMBJ170CAHE3_A/I by Vishay Intertechnology, a top-tier manufacturer known for delivering quality transient suppression devices. With a maximum non-repetitive peak reverse power dissipation of 600W and a nominal breakdown voltage of 199V, this product ensures reliable protection for your circuits. Ideal for a wide range of applications, this diode type trans voltage suppressor diode offers bidirectional polarity and a maximum clamping voltage of 275V. Trust Vishay Intertechnology to provide you with the value, benefits, and advantages you need for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it suitable for various environments and applications.

Surface Mount: YES

The ability to be surface mounted allows for easy and efficient integration into circuit boards during manufacturing.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

This high power dissipation capacity ensures the device can handle sudden surges or spikes in voltage without damage.

Nominal Breakdown Voltage: 199 V

The nominal breakdown voltage indicates the level at which the device will start conducting, providing protection against overvoltage conditions.

Maximum Reverse Current: 1 uA

The low reverse current ensures minimal power loss and improved efficiency of the device.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function reliably in a wide range of environmental conditions.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the device can still provide protection even in cold environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This type of diode is specifically designed to suppress voltage spikes and transients, making it a suitable choice for protection circuits.

Technology: AVALANCHE

The avalanche technology used in this device allows it to handle high-power surges effectively without failing.

Maximum Clamping Voltage: 275 V

The maximum clamping voltage indicates the maximum voltage the device will allow before conducting, offering reliable protection against voltage spikes.

Technical Specifications

Transient Suppression Devices SMBJ170CAHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

209 V

Minimum Breakdown Voltage:

189 V

Nominal Breakdown Voltage:

199 V

Maximum Clamping Voltage:

275 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

170 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

170 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ170CAHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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