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SMBJ13CAHM3_A/H

Vishay Intertechnology

SMBJ13CAHM3_A/H by Vishay Intertechnology

Vishay Intertechnology's SMBJ13CAHM3_A/H is a single bidirectional avalanche diode with 600W power dissipation, ideal for transient suppression. With a breakdown voltage of 15.9V and clamping voltage of 21.5V, it operates b/w -55°C to 150°C. This UL recognized device in small outline package is suitable for protecting sensitive electronics from voltage spikes.

Median Price

$0.665

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 659 parts In-Stock

1+ parts

$0.401

100+ parts

$0.232

1k+ parts

$0.190

10k+ parts

-

659

$0.401

$0.232

$0.190

-

Element14

Singapore . 659 parts In-Stock

1+ parts

$0.665

100+ parts

$0.382

1k+ parts

$0.304

10k+ parts

$0.288

659

$0.665

$0.382

$0.304

$0.288

Newark

USA . 661 parts In-Stock

1+ parts

$0.854

100+ parts

$0.584

1k+ parts

$0.379

10k+ parts

-

661

$0.854

$0.584

$0.379

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 57 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

-

57

$0.294

-

-

-

Vyrian

USA . 3,810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,810

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 325 parts In-Stock

1+ parts

$0.067

100+ parts

-

1k+ parts

-

10k+ parts

-

325

$0.067

-

-

-

Corohmni

South Africa . 727 parts In-Stock

1+ parts

$0.145

100+ parts

-

1k+ parts

-

10k+ parts

-

727

$0.145

-

-

-

Continental Prestige Electronics

USA . 750 parts In-Stock

1+ parts

$0.218

100+ parts

$0.158

1k+ parts

-

10k+ parts

-

750

$0.218

$0.158

-

-

Ampacity Inc.

Singapore . 197 parts In-Stock

1+ parts

$0.247

100+ parts

-

1k+ parts

-

10k+ parts

-

197

$0.247

-

-

-

Argo Parts USA

USA . 1,513 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

$0.286

1,513

$0.294

-

-

$0.286

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.300

100+ parts

$0.300

1k+ parts

$0.300

10k+ parts

-

100

$0.300

$0.300

$0.300

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.289

1k+ parts

$0.280

10k+ parts

$0.274

50

-

$0.289

$0.280

$0.274

Overview

Enhance your electronic devices with the Vishay Intertechnology SMBJ13CAHM3_A/H Transient Suppression Device. Crafted with top-tier quality and expertise, this product is designed to protect your equipment from voltage spikes and surges, ensuring reliability and durability. Perfect for a wide range of applications, this diode offers peace of mind and performance like no other. Trust Vishay Intertechnology for superior protection and unmatched value in every use. Elevate your electronics with the SMBJ13CAHM3_A/H today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durable and reliable protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high power surges and transient events effectively without getting damaged.

Nominal Breakdown Voltage: 15.15 V

Provides precise voltage clamping during transient events, ensuring protection for sensitive electronics.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments, making it suitable for a wide range of applications.

Minimum Breakdown Voltage: 14.4 V

Ensures that the device activates at the specified voltage threshold, providing consistent protection.

Technical Specifications

Transient Suppression Devices SMBJ13CAHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

15.9 V

Minimum Breakdown Voltage:

14.4 V

Nominal Breakdown Voltage:

15.15 V

Maximum Clamping Voltage:

21.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

13 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

13 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ13CAHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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