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SMBJ11A-M3/5B

Vishay Intertechnology

SMBJ11A-M3/5B by Vishay Intertechnology

Vishay Intertechnology's SMBJ11A-M3/5B is a unidirectional transient suppression diode with 12.85 V breakdown voltage and 600 W peak reverse power dissipation. Ideal for protecting sensitive electronics from voltage spikes in applications like automotive, industrial, and consumer electronics due to its compact single configuration and high clamping voltage of 18.2 V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,213 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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8,213

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Nova Conductors

Japan . 300 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,147 parts In-Stock

1+ parts

$1.010

100+ parts

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1k+ parts

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10k+ parts

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1,147

$1.010

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AZTECH Wire

Italy . 587 parts In-Stock

1+ parts

$11.766

100+ parts

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1k+ parts

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10k+ parts

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587

$11.766

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Aranea Global

USA . 500 parts In-Stock

1+ parts

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100+ parts

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500

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Overview

Enhance your electronic devices with the high-quality SMBJ11A-M3/5B Transient Suppression Device by Vishay Intertechnology. Designed with precision and reliability in mind, this product offers superior protection against voltage spikes, ensuring the longevity of your equipment. Whether you're working on industrial machinery or consumer electronics, this small yet powerful device is essential for safeguarding your investments. Trust Vishay Intertechnology to deliver cutting-edge solutions that provide peace of mind and unmatched performance. Upgrade your devices today with the SMBJ11A-M3/5B and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent protection and durability for the device, making it suitable for a variety of applications.

Nominal Breakdown Voltage: 12.85 V

This high breakdown voltage ensures efficient protection against voltage surges or transients, making it a reliable choice for safeguarding sensitive electronics.

Maximum Power Dissipation: 5 W

With a high power dissipation capacity, this device can effectively handle high surge currents and protect connected equipment from damage.

Surface Mount: YES

Being surface mountable makes the installation process easier and more convenient, saving time and effort during assembly.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this device to function reliably in various environmental conditions, increasing its versatility and suitability for different applications.

Technical Specifications

Transient Suppression Devices SMBJ11A-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED

Maximum Breakdown Voltage:

13.5 V

Minimum Breakdown Voltage:

12.2 V

Nominal Breakdown Voltage:

12.85 V

Maximum Clamping Voltage:

18.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

11 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

11 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ11A-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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