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SMBJ11A-M3/52

Vishay Intertechnology

SMBJ11A-M3/52 by Vishay Intertechnology

Vishay Intertechnology's SMBJ11A-M3/52 is a unidirectional Trans Voltage Suppressor Diode with 12.85V breakdown voltage, 600W peak reverse power dissipation, and 5uA max reverse current. Ideal for transient suppression in electronics, it operates b/w -55°C to 150°C with a max clamping voltage of 18.2V.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 16,678 parts In-Stock

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16,678

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ACDS - Activité Composants Distribution Service

France . 1,500 parts In-Stock

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1,500

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Bristol Electronics

USA . 1,500 parts In-Stock

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1,500

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Dan-Mar Components

USA . 1,500 parts In-Stock

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1,500

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 943 parts In-Stock

1+ parts

$1.010

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943

$1.010

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Component Stockers USA

USA . 43,923 parts In-Stock

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$2.200

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43,923

$2.200

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AZTECH Wire

Italy . 824 parts In-Stock

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$7.382

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824

$7.382

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Looking for reliable transient suppression devices for your electronic applications? Look no further than the SMBJ11A-M3/52 by Vishay Intertechnology. With a reputation for top-notch quality and performance, Vishay's products are trusted by professionals worldwide. The SMBJ11A-M3/52 is perfect for safeguarding your circuits from voltage spikes, offering peace of mind and protection for your valuable equipment. Trust Vishay Intertechnology for all your transient suppression needs and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, making it easy to handle and resistant to damage.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

The high power dissipation capability ensures that the device can handle transient surges effectively, providing reliable protection for sensitive electronic components.

Nominal Breakdown Voltage: 12.85 V

The specific breakdown voltage ensures that the device activates at the desired voltage level, providing precise protection for the connected circuit.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the device to function effectively in various environmental conditions, ensuring continuous protection for electronic equipment.

Maximum Clamping Voltage: 18.2 V

The device effectively clamps the voltage spike to a safe level, preventing damage to the connected circuit by limiting the voltage across it.

Technical Specifications

Transient Suppression Devices SMBJ11A-M3/52 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED

Maximum Breakdown Voltage:

13.5 V

Minimum Breakdown Voltage:

12.2 V

Nominal Breakdown Voltage:

12.85 V

Maximum Clamping Voltage:

18.2 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

11 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

11 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMBJ11A-M3/52 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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