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SMB10J28A-E3/52

Vishay Intertechnology

SMB10J28A-E3/52 by Vishay Intertechnology

Vishay Intertechnology's SMB10J28A-E3/52 is a unidirectional avalanche diode with 32.75V breakdown voltage, 1000W peak power dissipation, and 1uA reverse current. Ideal for transient suppression in electronics, it operates b/w -55°C to 150°C and has a compact rectangular package for surface mount applications.

Median Price

$1.080

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,460 parts In-Stock

1+ parts

$1.080

100+ parts

$0.439

1k+ parts

$0.295

10k+ parts

$0.242

2,460

$1.080

$0.439

$0.295

$0.242

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,061 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,061

-

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 434 parts In-Stock

1+ parts

$0.294

100+ parts

-

1k+ parts

-

10k+ parts

-

434

$0.294

-

-

-

Ampacity Inc.

Singapore . 1,374 parts In-Stock

1+ parts

$0.540

100+ parts

-

1k+ parts

-

10k+ parts

-

1,374

$0.540

-

-

-

Semicontronic

India . 1,262 parts In-Stock

1+ parts

$0.540

100+ parts

$0.526

1k+ parts

$0.524

10k+ parts

-

1,262

$0.540

$0.526

$0.524

-

Netroflash

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Overview

Experience the superior quality and reliability of Vishay Intertechnology with the SMB10J28A-E3/52 transient suppression device. Protect your electronics from voltage spikes with this high-performance diode, offering a maximum clamping voltage of 45.4V and a nominal breakdown voltage of 32.75V. Whether you're in the automotive, industrial, or consumer electronics industry, this single-configured, surface-mount device provides unmatched protection against transient events. Trust Vishay's expertise in semiconductor technology to safeguard your valuable equipment and ensure uninterrupted operation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transient suppression device, ensuring long-lasting performance.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1000 W

Capable of handling high power surges, making it reliable for suppressing transient voltage spikes.

Nominal Breakdown Voltage: 32.75 V

Offers effective protection by breaking down at a specified voltage, diverting excess voltage away from sensitive components.

Maximum Operating Temperature: 150 °C

Can operate effectively in high-temperature environments, ensuring continuous protection against transient surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes specialized diode technology for efficient suppression of transient voltages, enhancing the overall performance of the device.

Technical Specifications

Transient Suppression Devices SMB10J28A-E3/52 attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.4 V

Minimum Breakdown Voltage:

31.1 V

Nominal Breakdown Voltage:

32.75 V

Maximum Clamping Voltage:

45.4 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

28 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMB10J28A-E3/52 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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