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SMAJ58CAHM3_A/I

Vishay Intertechnology

SMAJ58CAHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SMAJ58CAHM3_A/I is a single bidirectional transient suppression diode with 67.8V breakdown voltage, 400W peak power dissipation, and 1uA reverse current. Ideal for protecting sensitive electronics from voltage spikes in automotive and industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,050 parts In-Stock

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6,050

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 962 parts In-Stock

1+ parts

$0.079

100+ parts

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962

$0.079

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Corohmni

South Africa . 178 parts In-Stock

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$0.135

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178

$0.135

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Ampacity Inc.

Singapore . 722 parts In-Stock

1+ parts

$1.010

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722

$1.010

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AZTECH Wire

Italy . 352 parts In-Stock

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$5.726

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352

$5.726

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Continental Prestige Electronics

USA . 6,057 parts In-Stock

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6,057

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Argo Parts USA

USA . 4,546 parts In-Stock

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4,546

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Aranea Global

USA . 2,000 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SMAJ58CAHM3_A/I. With a maximum non-repetitive peak reverse power dissipation of 400W and a nominal breakdown voltage of 67.8V, this diode offers top-notch quality and performance. Perfect for applications requiring protection against voltage spikes, this product ensures your equipment stays safe and operational. Trust Vishay Intertechnology's expertise in manufacturing to deliver value and peace of mind for all your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Nominal Breakdown Voltage: 67.8 V

The higher breakdown voltage helps in protecting connected devices from voltage surges and spikes, ensuring their safety.

Maximum Power Dissipation: 3.3 W

Allows for efficient dissipation of excess power, preventing overheating of the device during operation.

Reference Standard: AEC-Q101; UL RECOGNIZED

Compliance with industry standards ensures quality and reliability of the product for various applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient suppression applications, offering effective protection against voltage spikes.

Technical Specifications

Transient Suppression Devices SMAJ58CAHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.2 V

Minimum Breakdown Voltage:

64.4 V

Nominal Breakdown Voltage:

67.8 V

Maximum Clamping Voltage:

93.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

3.3 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

58 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMAJ58CAHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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