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SMAJ58CAHE3_A/I

Vishay Intertechnology

SMAJ58CAHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SMAJ58CAHE3_A/I is a single transient suppression device with 400W peak power dissipation, ideal for bidirectional protection in applications requiring a breakdown voltage of 64.4-71.2V. With AEC-Q101 and UL recognition, it operates b/w -55 to 150°C, making it suitable for various electronic systems needing reliable overvoltage protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,777 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 554 parts In-Stock

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$0.129

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554

$0.129

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Aztec Data Supply Inc.

USA . 1,307 parts In-Stock

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$0.169

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$0.169

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Ampacity Inc.

Singapore . 398 parts In-Stock

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$2.010

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398

$2.010

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AZTECH Wire

Italy . 333 parts In-Stock

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$5.553

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333

$5.553

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Continental Prestige Electronics

USA . 6,426 parts In-Stock

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Argo Parts USA

USA . 2,803 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Upgrade your electronics with the Vishay Intertechnology SMAJ58CAHE3_A/I Transient Suppression Device. Designed to provide superior protection against voltage spikes, this product offers peace of mind for your devices. With a maximum power dissipation of 3.3W and a minimum breakdown voltage of 64.4V, this device ensures reliable performance in a variety of applications. Trust Vishay Intertechnology for quality components that deliver exceptional value and unmatched benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the packaging of this product provides durability and protection, ensuring the device can withstand harsh operating environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

With a high power dissipation rating of 400 W, this product is capable of handling sudden spikes in power effectively, offering reliable protection against transient voltage surges.

Nominal Breakdown Voltage: 67.8 V

The nominal breakdown voltage of 67.8 V indicates the voltage at which the device starts conducting, providing efficient protection against overvoltage conditions.

Maximum Reverse Current: 1 uA

The low reverse current of 1 uA ensures minimal power loss and enhances the overall performance of the transient suppression device.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows the device to function effectively in a wide range of temperature environments, making it suitable for various applications.

Technical Specifications

Transient Suppression Devices SMAJ58CAHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

71.2 V

Minimum Breakdown Voltage:

64.4 V

Nominal Breakdown Voltage:

67.8 V

Maximum Clamping Voltage:

93.6 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

3.3 W

Reference Standard:

AEC-Q101; UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

58 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

58 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SMAJ58CAHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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