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SM8S36AHE3/2D

Vishay Intertechnology

SM8S36AHE3/2D by Vishay Intertechnology

Vishay Intertechnology's SM8S36AHE3/2D is a single TRANS VOLTAGE SUPPRESSOR DIODE with 36V VRWM. It offers 5200W PPK, 58.1V VC, and AEC-Q101 compliance. Ideal for transient suppression in automotive electronics due to its high power dissipation and breakdown voltage capabilities.

Median Price

$1.935

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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RS (Exports)

UK . 2,117 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$2.384

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Chip Stock

USA . 16,940 parts In-Stock

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Vyrian

USA . 6,873 parts In-Stock

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Connect4Technologies Inc.

Canada . 675 parts In-Stock

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ComSIT Distribution GmbH

Germany . 57 parts In-Stock

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Cyclops Electronics Ltd

UK . 37 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 1,104 parts In-Stock

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$0.070

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Aztec Data Supply Inc.

USA . 1,106 parts In-Stock

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$0.130

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.195

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$0.185

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Semicontronic

India . 1,697 parts In-Stock

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$1.640

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$1.599

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$1.591

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Argo Parts USA

USA . 3,519 parts In-Stock

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Continental Prestige Electronics

USA . 3,128 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Ampacity Inc.

Singapore . 2,040 parts In-Stock

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$3.580

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AZTECH Wire

Italy . 669 parts In-Stock

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RC Electronics

USA . 32,806 parts In-Stock

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Perfect Parts

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Overview

Looking for reliable transient suppression devices? Look no further than the Vishay Intertechnology SM8S36AHE3/2D! With a maximum non-repetitive peak reverse power dissipation of 5200W and a nominal breakdown voltage of 42.1V, this product offers top-notch quality and performance. Ideal for applications requiring high-power dissipation and excellent surge protection, this avalanche technology diode provides peace of mind against voltage spikes. Trust Vishay Intertechnology for superior products that deliver unmatched value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5200 W

High power dissipation capability ensures protection against sudden voltage surges and spikes.

Nominal Breakdown Voltage: 42.1 V

Provides effective protection by breaking down at a specified voltage limit to prevent damage to connected devices.

Maximum Operating Temperature: 175 °C

Can operate efficiently in high-temperature environments, improving reliability in various applications.

Peak Reflow Temperature: 245°C

Withstands high reflow temperatures during manufacturing processes, ensuring durability and reliability.

Technical Specifications

Transient Suppression Devices SM8S36AHE3/2D attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

HIGH RELIABILITY, PD-CASE

Maximum Breakdown Voltage:

44.2 V

Minimum Breakdown Voltage:

40 V

Nominal Breakdown Voltage:

42.1 V

Case Connection:

ANODE

Maximum Clamping Voltage:

58.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-218AB

JESD-30 Code:

R-PSSO-C1

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

5200 W

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

8 W

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

36 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM8S36AHE3/2D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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