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SM15T33CAHM3_A/I

Vishay Intertechnology

SM15T33CAHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM15T33CAHM3_A/I is a single avalanche diode with 1500W power dissipation, 33.05V breakdown voltage, and bidirectional polarity. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and 45.7V clamping voltage capability at -65°C to 150°C operating temperature range.

Median Price

$0.050

Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

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$0.050

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Vyrian

USA . 5,215 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Ampacity Inc.

Singapore . 60 parts In-Stock

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$0.043

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60

$0.043

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.048

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$0.048

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60

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Aztec Data Supply Inc.

USA . 1,120 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Semicontronic

India . 60 parts In-Stock

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$0.093

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$0.091

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$0.090

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AZTECH Wire

Italy . 203 parts In-Stock

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$13.457

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Continental Prestige Electronics

USA . 5,260 parts In-Stock

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Argo Parts USA

USA . 4,441 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Vishay Intertechnology's SM15T33CAHM3_A/I is a top-tier transient suppression device that offers unrivaled quality and reliability. Designed with cutting-edge technology, this diode provides lightning-fast protection against voltage spikes, ensuring the safety of your sensitive electronic equipment. With a maximum clamping voltage of 45.7 V, this device is ideal for a wide range of applications where safeguarding against overvoltage is crucial. Invest in Vishay Intertechnology's SM15T33CAHM3_A/I and experience the peace of mind that comes with superior surge protection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy helps enhance the durability and reliability of the device, making it suitable for various environments.

Config: SINGLE

The single configuration simplifies installation and maintenance processes, making it a convenient choice for users.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

With a high power dissipation capability, this device can effectively protect against transient surges and spikes.

Nominal Breakdown Voltage: 33.05 V

The nominal breakdown voltage ensures consistent and reliable performance in suppressing voltage spikes.

Maximum Reverse Current: 1 uA

The low reverse current helps in minimizing power loss and improving the efficiency of the device.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of board space and easy integration into existing electronic systems.

Reverse Test Voltage: 28.2 V

The reverse test voltage indicates the voltage at which the device can effectively suppress reverse current, offering reliable protection.

No. of Terminals: 2

The two terminals provide a simple and straightforward connection setup, making it user-friendly for installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and makes it suitable for applications where size is limited.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the device can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures the device can function effectively in cold environments as well.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides excellent solderability and ensures a reliable electrical connection.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options and makes it compatible with different circuit layouts.

Maximum Power Dissipation: 6.5 W

The high power dissipation capability helps in effectively dissipating excess energy during transient events, protecting the circuit.

Minimum Breakdown Voltage: 31.4 V

The minimum breakdown voltage ensures reliable performance in suppressing transient voltage spikes below the specified threshold.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering and reflow processes for reliable joint connections.

Peak Reflow Temperature °C: 260

The high peak reflow temperature enables efficient soldering during assembly, ensuring a secure electrical connection.

Maximum Breakdown Voltage: 34.7 V

The high maximum breakdown voltage provides additional protection against high voltage transients, enhancing the device's reliability.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 standards, this device meets stringent automotive industry requirements for quality and reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a trans voltage suppressor diode, this device effectively protects electronic circuits from voltage surges and spikes.

Technology: AVALANCHE

The avalanche technology used in this device helps in rapidly clamping high-energy transient events, offering superior protection.

Terminal Form: C BEND

The C bend terminal form ensures a secure mechanical connection, preventing any damage to the device during installation or operation.

Maximum Repetitive Peak Reverse Voltage: 28.2 V

The maximum repetitive peak reverse voltage indicates the device's ability to withstand repeated transient events without performance degradation.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows the device to suppress transients in both directions, providing comprehensive protection.

Maximum Clamping Voltage: 45.7 V

The high maximum clamping voltage ensures effective suppression of transient spikes above the specified level, safeguarding the circuit.

Diode Element Material: SILICON

The silicon diode element material offers high performance and reliability, making this device a durable choice for transient suppression applications.

Technical Specifications

Transient Suppression Devices SM15T33CAHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33.05 V

Maximum Clamping Voltage:

45.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM15T33CAHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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