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SM15T33CAHM3_A/H

Vishay Intertechnology

SM15T33CAHM3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM15T33CAHM3_A/H is a single avalanche diode with 1500W power dissipation, 33.05V breakdown voltage, and bidirectional polarity. Ideal for transient suppression in automotive applications due to AEC-Q101 compliance and 45.7V clamping voltage capability at -65°C to 150°C operating range.

Median Price

$0.193

Lifecycle Status

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3

In-Stock Inventory

1k+

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Adafruit Industries

USA . 350 parts In-Stock

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$0.193

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$0.183

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$0.183

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$0.193

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Vyrian

USA . 4,925 parts In-Stock

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Nova Conductors

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Aztec Data Supply Inc.

USA . 1,133 parts In-Stock

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$0.023

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Ampacity Inc.

Singapore . 242 parts In-Stock

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$0.164

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Semicontronic

India . 202 parts In-Stock

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$0.159

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202

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Corohmni

South Africa . 109 parts In-Stock

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$0.181

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Advanced Electronics

New Zealand . 350 parts In-Stock

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AZTECH Wire

Italy . 351 parts In-Stock

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$6.555

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Argo Parts USA

USA . 3,263 parts In-Stock

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Continental Prestige Electronics

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Bastille Electronics

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Overview

Protect your electronics with the reliable SM15T33CAHM3_A/H transient suppression device from Vishay Intertechnology. Designed for high-quality performance, this product offers a Nominal Breakdown Voltage of 33.05 V and Maximum Clamping Voltage of 45.7 V to safeguard against voltage spikes. With AEC-Q101 certification, this diode is ideal for automotive and industrial applications. Trust Vishay Intertechnology to deliver superior quality and protection for your valuable equipment.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, suitable for various applications.

Config: SINGLE

The single configuration simplifies installation and maintenance of this transient suppression device.

Surface Mount: YES

With surface mount capability, this device can be easily integrated into compact electronic designs.

Max Non-Repetitive Peak Reverse Power Dissipation: 1500 W

The high power dissipation capability ensures reliable protection against voltage spikes and surges.

Nominal Breakdown Voltage: 33.05 V

The precise nominal breakdown voltage provides accurate protection for sensitive electronic components.

Max Reverse Current: 1 uA

The low reverse current ensures minimal power loss during normal operation.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on a circuit board.

Reverse Test Voltage: 28.2 V

The reverse test voltage rating confirms the device's ability to withstand reverse voltage conditions.

No. of Terminals: 2

The two terminals provide a simple connection interface for easy integration into circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and improves overall circuit board layout efficiency.

Max Operating Temperature: 150 °C

With a high maximum operating temperature, this device can withstand harsh environmental conditions.

Min Operating Temperature: -65 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments.

Terminal Finish: Matte Tin (Sn)

The matte tin finish on the terminals provides corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connection options.

Max Power Dissipation: 6.5 W

The high power dissipation rating allows for effective protection against transient voltage events.

Min Breakdown Voltage: 31.4 V

The minimum breakdown voltage ensures reliable protection for sensitive electronic components.

Max Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature ensures proper soldering during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature confirms the device's ability to withstand high-temperature soldering processes.

Max Breakdown Voltage: 34.7 V

The high maximum breakdown voltage provides an additional margin of safety against voltage surges.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high-quality and reliability for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a transient voltage suppressor diode ensures effective protection against voltage spikes and transients.

Technology: AVALANCHE

The avalanche technology used in this device offers fast response and efficient protection against transient events.

Terminal Form: C BEND

The C bend terminal form allows for a secure and reliable connection in varied applications.

Max Repetitive Peak Reverse Voltage: 28.2 V

The maximum repetitive peak reverse voltage rating confirms the device's ability to handle continuous voltage fluctuations.

Polarity: BIDIRECTIONAL

The bidirectional polarity of the device allows for protection against voltage spikes in both directions.

Max Clamping Voltage: 45.7 V

The maximum clamping voltage ensures that the protected circuit remains within safe limits during transient events.

Diode Element Material: SILICON

The silicon diode element material provides high efficiency and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices SM15T33CAHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33.05 V

Maximum Clamping Voltage:

45.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM15T33CAHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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