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SM15T33CAHE3_A/I

Vishay Intertechnology

SM15T33CAHE3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM15T33CAHE3_A/I is a single avalanche diode with 1500W power dissipation, 33.05V breakdown voltage, and 1uA reverse current. Ideal for transient suppression in automotive electronics due to its bidirectional polarity and small outline package. Operating temperature range from -65°C to 150°C makes it suitable for various applications.

Median Price

$0.196

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

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$0.196

100+ parts

$0.186

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$0.186

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100

$0.196

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$0.186

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Distributors (In-Stock)

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Vyrian

USA . 5,567 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 162 parts In-Stock

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$0.095

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162

$0.095

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Corohmni

South Africa . 225 parts In-Stock

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$0.160

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225

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Semicontronic

India . 100 parts In-Stock

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$0.167

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$0.163

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$0.162

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100

$0.167

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$0.162

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Ampacity Inc.

Singapore . 93 parts In-Stock

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$0.167

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93

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.196

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$0.186

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$0.186

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100

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AZTECH Wire

Italy . 618 parts In-Stock

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$19.306

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Continental Prestige Electronics

USA . 2,941 parts In-Stock

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Argo Parts USA

USA . 1,593 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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Overview

Enhance your electronic devices with the Vishay Intertechnology SM15T33CAHE3_A/I Transient Suppression Device. Designed to protect against voltage spikes and surges, this high-quality product offers superior performance and reliability. Whether you're in need of over-voltage protection for automotive, industrial, or consumer applications, this device is the perfect solution. Trust Vishay Intertechnology to deliver top-notch products that provide peace of mind and ensure the longevity of your valuable electronics. Upgrade today and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and protection for the components inside, ensuring the product can withstand harsh environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

The high power dissipation capability makes this product suitable for handling surges and spikes in electrical circuits effectively.

Nominal Breakdown Voltage: 33.05 V

The precise breakdown voltage ensures reliable protection against overvoltage events, safeguarding sensitive components in the circuit.

Maximum Operating Temperature: 150 °C

The wide operating temperature range allows the device to function efficiently even in extreme temperature conditions, making it versatile for various applications.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures that the product meets stringent automotive industry standards for reliability and quality, making it a trusted choice for automotive applications.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor diodes ensures fast response times and efficient suppression of transient voltage spikes, providing effective protection for the circuit.

Technical Specifications

Transient Suppression Devices SM15T33CAHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33.05 V

Maximum Clamping Voltage:

45.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM15T33CAHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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