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SM15T33AHM3_A/I

Vishay Intertechnology

SM15T33AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM15T33AHM3_A/I is a 1500W TRANS VOLTAGE SUPPRESSOR DIODE with 33.05V Breakdown Voltage, ideal for transient suppression applications. With a max clamping voltage of 45.7V and operating temperature range from -65 to 150 °C, it offers reliable protection in various electronic circuits. This single-config device comes in a small outline package suitable for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,294 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 248 parts In-Stock

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$0.010

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$0.010

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$0.010

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248

$0.010

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$0.010

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Aztec Data Supply Inc.

USA . 746 parts In-Stock

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$0.134

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746

$0.134

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Corohmni

South Africa . 577 parts In-Stock

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$0.147

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577

$0.147

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Ampacity Inc.

Singapore . 531 parts In-Stock

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$3.010

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531

$3.010

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Component Stockers USA

USA . 21,557 parts In-Stock

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$3.050

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$3.050

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AZTECH Wire

Italy . 863 parts In-Stock

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$16.144

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863

$16.144

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Continental Prestige Electronics

USA . 3,935 parts In-Stock

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Argo Parts USA

USA . 2,584 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Enhance your electronic circuits with the SM15T33AHM3_A/I by Vishay Intertechnology, a leading manufacturer in transient suppression devices. Designed for high reliability and performance, this compact single-configured device offers superior protection against voltage transients, making it ideal for various applications. With a nominal breakdown voltage of 33.05V and maximum clamping voltage of 45.7V, this diode ensures the safety and longevity of your equipment. Trust Vishay Intertechnology to deliver quality products that provide unmatched value and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the device, making it suitable for various environmental conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

High power dissipation capability ensures reliable suppression of transient overvoltages and spikes in the circuit.

Nominal Breakdown Voltage: 33.05 V

Precise breakdown voltage helps in effectively clamping voltage spikes and protecting sensitive components in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in different applications without compromising performance.

Peak Reflow Temperature: 260 C

Ability to withstand high reflow temperatures during manufacturing processes ensures product reliability and consistency.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode design ensures efficient suppression of transient voltage spikes, safeguarding the circuit components.

Technology: AVALANCHE

Avalanche technology enables fast response time and high energy handling capability, making the device suitable for demanding applications.

Technical Specifications

Transient Suppression Devices SM15T33AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

34.7 V

Minimum Breakdown Voltage:

31.4 V

Nominal Breakdown Voltage:

33.05 V

Maximum Clamping Voltage:

45.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AB

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

6.5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

28.2 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

28.2 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM15T33AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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