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SI1031R-T1-GE3

Vishay Intertechnology

SI1031R-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI1031R-T1-GE3 is a P-channel FET with 20V DS breakdown voltage, 0.14A max drain current, and 8 ohm max on-resistance. Ideal for switching applications in small outline packages, it operates in enhancement mode at up to 150°C with matte tin terminal finish.

Median Price

$0.215

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1,699 parts In-Stock

1+ parts

$0.215

100+ parts

$0.198

1k+ parts

$0.185

10k+ parts

-

1,699

$0.215

$0.198

$0.185

-

DigiKey

USA . 250 parts In-Stock

1+ parts

$0.640

100+ parts

$0.251

1k+ parts

$0.170

10k+ parts

$0.126

250

$0.640

$0.251

$0.170

$0.126

Element14

Singapore . 9,997 parts In-Stock

1+ parts

-

100+ parts

$0.228

1k+ parts

$0.136

10k+ parts

$0.122

9,997

-

$0.228

$0.136

$0.122

Farnell

UK . 8,432 parts In-Stock

1+ parts

-

100+ parts

$0.136

1k+ parts

$0.111

10k+ parts

$0.088

8,432

-

$0.136

$0.111

$0.088

Mouser Electronics

USA . 5,056 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.107

5,056

-

-

-

$0.107

Chip1Stop

Japan . 1,699 parts In-Stock

1+ parts

-

100+ parts

$0.161

1k+ parts

$0.113

10k+ parts

-

1,699

-

$0.161

$0.113

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Verical

USA . 61 parts In-Stock

1+ parts

-

100+ parts

$0.243

1k+ parts

$0.162

10k+ parts

$0.116

61

-

$0.243

$0.162

$0.116

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 36,112 parts In-Stock

1+ parts

$0.107

100+ parts

-

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36,112

$0.107

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-

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Bristol Electronics

USA . 297 parts In-Stock

1+ parts

$0.762

100+ parts

$0.381

1k+ parts

$0.267

10k+ parts

-

297

$0.762

$0.381

$0.267

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ComSIT Distribution GmbH

Germany . 7,900 parts In-Stock

1+ parts

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100+ parts

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7,900

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-

-

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LIBRA Elektronik GmbH

Germany . 2,487 parts In-Stock

1+ parts

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2,487

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ACDS - Activité Composants Distribution Service

France . 948 parts In-Stock

1+ parts

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948

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Dan-Mar Components

USA . 948 parts In-Stock

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948

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 141,120 parts In-Stock

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141,120

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 41,120 parts In-Stock

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41,120

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QUARKTWIN TECHNOLOGY LTD

USA . 14,627 parts In-Stock

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14,627

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

1+ parts

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100+ parts

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9,000

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Speed Components Ltd (Excess)

Israel . 1,573 parts In-Stock

1+ parts

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1,573

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Overview

Discover the ultimate solution for your switching needs with Vishay Intertechnology's SI1031R-T1-GE3. As a leader in small signal field effect transistors, Vishay ensures top-notch quality and reliability. This P-channel transistor with a built-in diode offers enhanced performance and efficiency for a wide range of applications. With its compact design and high power dissipation capabilities, the SI1031R-T1-GE3 provides unmatched value and benefits to customers looking for reliable switching solutions. Upgrade your electronics with Vishay Intertechnology today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring longer lifespan and reliability.

Polarity or Channel Type: P-CHANNEL

P-channel transistors typically have higher mobility and efficiency compared to N-channel transistors, making them suitable for certain applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can handle rapid changes in current flow effectively and efficiently.

Minimum DS Breakdown Voltage: 20 V

With a breakdown voltage of 20V, this transistor can handle higher voltages without failure or breakdown.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly, saving space and reducing overall manufacturing costs.

Maximum Drain Current (Abs) (ID): 0.14 A

Capable of handling a maximum drain current of 0.14A, this transistor is suitable for low to medium power applications.

Maximum Power Dissipation (Abs): 0.28 W

With a maximum power dissipation of 0.28W, this transistor can effectively dissipate heat generated during operation, preventing overheating.

Maximum Drain-Source On Resistance: 8 ohm

Low drain-source on resistance of 8 ohms enables efficient current flow and minimal power loss in the transistor.

Maximum Operating Temperature: 150 °C

With a high operating temperature of 150°C, this transistor can handle demanding environments and extended operation without degradation.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI1031R-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.14 A

Maximum Drain Current (ID):

.14 A

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI1031R-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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