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P6SMB51CAHE3_A/I

Vishay Intertechnology

P6SMB51CAHE3_A/I by Vishay Intertechnology

Vishay Intertechnology P6SMB51CAHE3_A/I is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 51V Breakdown Voltage. It operates b/w -65 to 150 °C and has a Max Clamping Voltage of 70.1V, making it ideal for transient suppression in automotive applications.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 13,966 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 889 parts In-Stock

1+ parts

$0.070

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889

$0.070

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Aztec Data Supply Inc.

USA . 3,205 parts In-Stock

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$0.179

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3,205

$0.179

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AZTECH Wire

Italy . 265 parts In-Stock

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$10.015

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265

$10.015

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Component Stockers USA

USA . 554 parts In-Stock

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$99.990

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554

$99.990

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Argo Parts USA

USA . 4,405 parts In-Stock

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4,405

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Continental Prestige Electronics

USA . 2,574 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than Vishay Intertechnology's P6SMB51CAHE3_A/I. With a maximum non-repetitive peak reverse power dissipation of 600 W and a nominal breakdown voltage of 51 V, this diode offers superior protection in a variety of applications. Whether you're safeguarding sensitive electronics or industrial equipment, this product's high-quality construction and advanced technology ensure peace of mind. Trust Vishay Intertechnology for top-notch performance and unmatched durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and corrosion resistance, making the device suitable for a wide range of applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum non-repetitive peak reverse power dissipation, this device can effectively handle transient voltage surges and protect sensitive electronic components from damage.

Nominal Breakdown Voltage: 51 V

The nominal breakdown voltage of 51 V ensures reliable protection against voltage spikes, safeguarding connected devices from overvoltage events.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to function effectively in various environmental conditions, ensuring continuous protection against transient voltage events.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a transient voltage suppressor diode ensures rapid clamping of transient voltage spikes, providing quick protection for connected equipment.

Technical Specifications

Transient Suppression Devices P6SMB51CAHE3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

53.6 V

Minimum Breakdown Voltage:

48.5 V

Nominal Breakdown Voltage:

51 V

Maximum Clamping Voltage:

70.1 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

43.6 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMB51CAHE3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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