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P6SMB27CAHE3_A/H

Vishay Intertechnology

P6SMB27CAHE3_A/H by Vishay Intertechnology

Vishay Intertechnology P6SMB27CAHE3_A/H is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 27V Breakdown Voltage. It operates b/w -65 to 150 °C and has a Clamping Voltage of 37.5V, making it ideal for transient suppression in automotive applications.

Median Price

$0.590

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$0.211

100+ parts

$0.192

1k+ parts

$0.173

10k+ parts

-

450

$0.211

$0.192

$0.173

-

Mouser Electronics

USA . 320 parts In-Stock

1+ parts

$0.970

100+ parts

$0.388

1k+ parts

$0.267

10k+ parts

$0.202

320

$0.970

$0.388

$0.267

$0.202

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 18,418 parts In-Stock

1+ parts

-

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18,418

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Vyrian

USA . 12,778 parts In-Stock

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12,778

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Rutronik

Germany . 4,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.244

10k+ parts

$0.206

4,500

-

-

$0.244

$0.206

Nova Conductors

Japan . 84 parts In-Stock

1+ parts

-

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84

-

-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 36 parts In-Stock

1+ parts

$0.028

100+ parts

-

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-

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36

$0.028

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Ampacity Inc.

Singapore . 144 parts In-Stock

1+ parts

$0.179

100+ parts

-

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144

$0.179

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.211

100+ parts

$0.192

1k+ parts

$0.173

10k+ parts

-

450

$0.211

$0.192

$0.173

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Component Connect

USA . 36,836 parts In-Stock

1+ parts

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36,836

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Netroflash

USA . 100 parts In-Stock

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100

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Overview

Discover the ultimate solution to protect your electronics with the P6SMB27CAHE3_A/H by Vishay Intertechnology. As a leading manufacturer in the industry of Transient Suppression Devices, Vishay Intertechnology ensures top-notch quality and reliability. This single-configured diode provides superior protection against voltage spikes, making it ideal for various applications. With a nominal breakdown voltage of 27V and maximum clamping voltage of 37.5V, this diode offers peace of mind for your electronic devices. Trust Vishay Intertechnology for unmatched performance and safeguard your equipment today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent insulation and protection for the device, ensuring reliability and durability in a variety of operating conditions.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows for the device to handle transient voltage spikes effectively without damage, making it suitable for demanding applications.

Nominal Breakdown Voltage: 27 V

The precise breakdown voltage ensures efficient suppression of voltage spikes, protecting sensitive electronics from damage.

Maximum Operating Temperature: 150 °C

Wide temperature range allows the device to function reliably in harsh environments without compromising performance.

Maximum Repetitive Peak Reverse Voltage: 23.1 V

The low reverse voltage ensures that the device activates quickly and effectively in response to transient voltage spikes, providing reliable protection for connected equipment.

Technical Specifications

Transient Suppression Devices P6SMB27CAHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

28.4 V

Minimum Breakdown Voltage:

25.7 V

Nominal Breakdown Voltage:

27 V

Maximum Clamping Voltage:

37.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

23.1 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMB27CAHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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