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P6SMB220A-M3/5B

Vishay Intertechnology

P6SMB220A-M3/5B by Vishay Intertechnology

Vishay Intertechnology's P6SMB220A-M3/5B is a single avalanche diode with 220V breakdown voltage, 600W power dissipation, and 1uA reverse current. Ideal for transient suppression in electronics, it operates b/w -65°C to 150°C, featuring a unidirectional polarity and matte tin terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 15,394 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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15,394

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Nova Conductors

Japan . 24 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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24

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,591 parts In-Stock

1+ parts

$1.010

100+ parts

-

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1,591

$1.010

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Component Stockers USA

USA . 80,058 parts In-Stock

1+ parts

$1.640

100+ parts

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1k+ parts

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10k+ parts

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80,058

$1.640

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AZTECH Wire

Italy . 298 parts In-Stock

1+ parts

$15.946

100+ parts

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298

$15.946

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Aranea Global

USA . 50 parts In-Stock

1+ parts

-

100+ parts

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50

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Overview

Discover the powerful protection of Vishay Intertechnology's P6SMB220A-M3/5B Transient Suppression Device. Designed for reliability and performance, this device offers 600W of peak reverse power dissipation and a nominal breakdown voltage of 220V. Ideal for a range of applications, this diode provides peace of mind against transient voltage spikes. Trust in Vishay Intertechnology's expertise and enhance your systems with the advanced technology of the P6SMB220A-M3/5B.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the device, ensuring it can handle transient surges effectively.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high power surges, making it suitable for applications where high transient power levels are expected.

Nominal Breakdown Voltage: 220 V

Ensures reliable protection by activating at the specified voltage threshold to divert excess energy away from sensitive components.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal leakage when the device is not conducting, which is important for efficiency and reliability.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient suppression, ensuring effective protection against voltage spikes and surges.

Technical Specifications

Transient Suppression Devices P6SMB220A-M3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

231 V

Minimum Breakdown Voltage:

209 V

Nominal Breakdown Voltage:

220 V

Maximum Clamping Voltage:

328 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Maximum Repetitive Peak Reverse Voltage:

185 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

185 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMB220A-M3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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