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P6SMB220A-E3/5B

Vishay Intertechnology

P6SMB220A-E3/5B by Vishay Intertechnology

Vishay Intertechnology's P6SMB220A-E3/5B is a 600W Transient Suppression Device with 220V Breakdown Voltage. Ideal for protecting electronic circuits from voltage spikes, it features a unidirectional diode element made of silicon and has a max clamping voltage of 328V. With its small outline package style and surface mount configuration, it is suitable for various applications requiring surge protection in temperatures ranging from -65°C to 150°C.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 32 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

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32

$0.120

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-

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Vyrian

USA . 11,889 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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11,889

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,733 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

5,733

$0.120

-

-

$0.118

Argo Parts USA

USA . 2,904 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

-

10k+ parts

$0.116

2,904

$0.120

-

-

$0.116

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.120

100+ parts

-

1k+ parts

$0.114

10k+ parts

$0.112

500

$0.120

-

$0.114

$0.112

AZTECH Wire

Italy . 825 parts In-Stock

1+ parts

$15.494

100+ parts

-

1k+ parts

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10k+ parts

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825

$15.494

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Metaverse IC Inc.

Canada . 3,200 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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3,200

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Overview

Discover the Vishay Intertechnology P6SMB220A-E3/5B, a high-quality transient suppression device designed to protect your electronic equipment from voltage spikes. With a maximum power dissipation of 600W and a nominal breakdown voltage of 220V, this device offers reliable overvoltage protection in a compact, surface-mount package. Whether you're looking to safeguard sensitive components in automotive, industrial, or telecommunications applications, this diode is your go-to solution. Trust Vishay's expertise in semiconductor technology to deliver unmatched performance and peace of mind for your valuable devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and provides electrical insulation, making it a reliable choice for transient suppression devices.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak reverse power dissipation, this product can handle surges effectively without being damaged, offering protection to connected components.

Nominal Breakdown Voltage: 220 V

The nominal breakdown voltage specifies the voltage at which the device begins to conduct, protecting the circuit from overvoltage events.

Maximum Reverse Current: 1 uA

The low maximum reverse current ensures minimal leakage, enhancing the overall performance and efficiency of the device.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the device to function effectively in harsh environmental conditions, making it suitable for a wide range of applications.

Technical Specifications

Transient Suppression Devices P6SMB220A-E3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

231 V

Minimum Breakdown Voltage:

209 V

Nominal Breakdown Voltage:

220 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

328 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

3.5 V

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

185 V

Maximum Reverse Current:

1 uA

Reverse Test Voltage:

185 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMB220A-E3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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